Sökning: "zincblende"

Visar resultat 1 - 5 av 9 avhandlingar innehållade ordet zincblende.

  1. 1. Photoluminescence Studies of Polytype Heterostructured InP Nanostructures

    Författare :Asmita Jash; NanoLund: Centre for Nanoscience; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V semiconductor; Photoluminescence; time-resolved photoluminescence TRPL ; polytype; crystal phase heterostructure; InP; wurtzite WZ ; zincblende; Indirect Exciton;

    Sammanfattning : The interface between two semiconductors significantly influences their optical and electronic properties. In contrast to traditional material heterostructures, polytype heterostructures between wurtzite (wz) and zincblende (zb) segments in homomaterial InP nanostructures exhibit sharp interfaces with minimal strain. LÄS MER

  3. 2. Electronic Structure of Some Zincblende Semiconductor Surfaces

    Författare :Yousef Omar Khazmi; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; CdTe; valence band; InP; tight-binding; core level; superlattice; surface; Green s function; adsorbates; semiconductor; GaAs; photoemission; electronic structure;

    Sammanfattning : The main aim of this thesis is to study and understand the surface electronic structure of compound semiconductors (ex. GaAs, InP, ..etc. LÄS MER

  4. 3. Transmission Electron Microscopy of Nanowires: Influence of Doping and Etching on Polytypism in InP

    Författare :Martin Ek; Centrum för analys och syntes; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : Semiconductor nanowires have many properties which makes them interesting for future electronic devices. The fact that they have very small diameters allow them to combine different III-V materials into heterostructures, and makes it possible to grow them on Si substrates which are the basis of nearly all current semiconductor technology. LÄS MER

  5. 4. Understanding the Role of Seed Particle Material on III-As Nanowire Growth

    Författare :Rong Sun; Fasta tillståndets fysik; []
    Nyckelord :seminconductor materials; nanowire growth; catalyst; metalorganic vapor phase epitaxy MOVPE ; Tin; Fysicumarkivet A:2018:Sun;

    Sammanfattning : III-V semiconductor nanowires have attracted extensive research interests over the past few decades due to their unique geometry and great potential for promoting new functionalities in future electronics, light-emitting diodes and solar cells. However, in order to push this technology beyond the laboratory level, it is essential to combine it with the current Si-based semiconductor industry for affordable production. LÄS MER

  7. 5. Crystal Structures in GaAs Nanowires: Growth and Characterization

    Författare :Daniel Jacobsson; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Fysicumarkivet A:2015:Jacobsson;

    Sammanfattning : With their nanometer size cross-section and high aspect ratio, semiconducting nanowires have properties that make them promising as building blocks in future electronic and optoelectronic devices. Because of their small size, their optical and electrical properties can differ from their bulk counterparts, and their geometry allows for material combinations not accessible in thin films. LÄS MER