Sökning: "wide band gap devices"

Visar resultat 16 - 20 av 41 avhandlingar innehållade orden wide band gap devices.

  1. 16. Adventures of III-V Semiconductor Surfaces

    Författare :Sandra Benter; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V; semiconductor surfaces; Bismuth; InAs; GaAs; droplets; STM; XPS; XPEEM; ARPES; Fysicumarkivet A:2023:Benter;

    Sammanfattning : Tailoring the surface composition and morphology of materials to enable new electronic devices is important for a wide range of applications such as quantum computing or spintronics. A fundamental understanding of the changes induced in the surface during different process steps can help to establish new synthesis routes as well as devices. LÄS MER

  3. 17. Growth and optical properties of III-V semiconductor nanowires: : Studies relevant for solar cells

    Författare :Vilgaile Dagyte; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Nanowire; semiconductor; Photovoltaics; Epitaxy; Optoelectronics; GaAs; GaInP; Fysicumarkivet A:2018:Dagyté;

    Sammanfattning : This thesis deals with epitaxial growth and optical properties of semiconductor nanowires with implications and insights about materials for solar cells. The chapters leading up to the papers give a broader background and an introduction to the field and include nanowires and their synthesis, semiconductor properties, solar cell operational principles, light interaction with a nanowire array, and optical characterization of such arrays. LÄS MER

  4. 18. CVD solutions for new directions in SiC and GaN epitaxy

    Författare :Xun Li; Urban Forsberg; Erik Janzén; Henrik Pedersen; Sebastian Lourdudoss; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; CVD; SiC; GaN; epitaxy;

    Sammanfattning : This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. LÄS MER

  5. 19. Phthalocyanine interfaces : the monolayer region

    Författare :Pål Palmgren; Mats Göthelid; Mats Fahlman; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; phthalocyanine; III-V semiconductor; transition metal oxides; adsorption; self-assembly; Material physics with surface physics; Materialfysik med ytfysik;

    Sammanfattning : Organic molecules adsorbed on inorganic substrates are the topics of interest in this thesis. Interfaces of this kind are found in dye sensitized solar cells that convert solar energy to electricity, a promising environmentally friendly energy source which might provide a route to replace fossil fuels. LÄS MER

  7. 20. Silicon Carbide High Temperature Photodetectors and Image Sensor

    Författare :Shuoben Hou; Mikael Östling; Carl-Mikael Zetterling; Per-Erik Hellström; Anthony O'Neill; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; high temperature; photodetector; photodiode; phototransistor; ultraviolet UV ; transistor-transistor logic TTL ; bipolar junction transistor BJT ; integrated circuit IC ; pixel sensor; image sensor; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Silicon Carbide (SiC) has the advantages of ultraviolet (UV) sensing and high temperature characteristics because of its wide band gap. Both merits make SiC photodetectors very attractive in astronomy, oil drilling, combustion detection, biology and medical applications. LÄS MER