Sökning: "voltage drop"

Visar resultat 1 - 5 av 31 avhandlingar innehållade orden voltage drop.

  1. 1. Voltage stability issues related to implementation of large wind farms

    Författare :Marcia Martins; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; grid code; voltage collapse; fixed speed wind turbine; voltage dip; short-term voltage stability; long-term voltage stability; wind park; voltage drop; wind farm; voltage stability;

    Sammanfattning : .... LÄS MER

  3. 2. Steady State Operation and Control of Power Distribution Systems in the Presence of Distributed Generation

    Författare :Ferry Viawan; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; distance protection; stochastic assessment; voltage dip; line drop compensation; distribution systems; on-load tap changer; overcurrent protection; sensitive equipment; voltage dip immunity; voltage control; short circuit; reactive power control; pilot protection.; protection coordination; protection; Distributed Generation; losses;

    Sammanfattning : In this thesis, the impact of distributed generation (DG) on steady state operation and control of power distribution systems is investigated. Over the last few years, a number of factors have led to an increased interest in DG schemes. DG is gaining more and more attention worldwide as an alternative to large-scale central generating stations. LÄS MER

  4. 3. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors

    Författare :Hyung-Seok Lee; Carl-Mikael Zetterling; Tat-Sing Chow; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; current gain; specific on resistance RSP_ON ; breakdown voltage; forward voltage drop; surface recombination; ohmic contact.; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Sammanfattning : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. LÄS MER

  5. 4. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors

    Författare :Benedetto Buono; Mikael Östling; Gunnar Malm; Martin Domeij; Lothar Frey; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; diode; simulation; characterization; current gain; on-resistance; breakdown voltage; forward voltage drop; degradation; SRA - ICT; SRA - Informations- och kommunikationsteknik;

    Sammanfattning : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. LÄS MER

  7. 5. Monolithic Integrated Oscillators - Phase Noise Analysis and Inductor Modeling

    Författare :Niklas Troedsson; Institutionen för elektro- och informationsteknik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; monolithic inductor; Monolithic integrated oscillator; CMOS; Bluetooth; low voltage; voltage controlled oscillator; Elektronik och elektroteknik; Electronics and Electrical technology; inductor modeling; phase noise analysis; quadrature voltage controlled oscillator;

    Sammanfattning : This doctoral dissertation studies voltage controlled oscillators (VCOs) that operate at low supply voltages. Due to smaller transistor sizes and lower supply voltage ratings with every new CMOS technology, voltage headroom is diminishing. LÄS MER