Sökning: "vertical scaling"

Visar resultat 1 - 5 av 35 avhandlingar innehållade orden vertical scaling.

1. 1. Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications

   Författare :Adam Jönsson; Nanoelektronik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; CMOS; RRAM; III-V; InAs; GaSb; InGaAs; Heterostructure; vertical; nanowire NW ; MOSFET; III-V materials; RRAM; RF; CMOS; InAs; GaSb; InGaAs; heterostructure; Vertical nanowire;

   Sammanfattning : This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. LÄS MER

3. 2. Vertical InAs Nanowire Devices and RF Circuits

   Författare :Martin Berg; Institutionen för elektro- och informationsteknik; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; Metal-oxide-semiconductor field-effect transistor; Transistor; Vertical; InAs; III-V semiconductor; Nanowire; Fabrication; DC; Resistor; TLM; RF; Mixer; Circuit.;

   Sammanfattning : Recent decades have seen an exponential increase in the functionality of electronic circuits, allowing for continuous innovation, which benefits society. This increase in functionality has been facilitated by scaling down the dimensions of the most important electronic component in modern electronics: the Si-based MOSFET. LÄS MER

4. 3. Vertical III-V Nanowire Tunnel Field-Effect Transistor

   Författare :Elvedin Memisevic; Nanoelektronik; []
   Nyckelord :Transistor; TFET; Steep slope; Nanowire; III-V materials; HSQ; Vertical; InAs; GaSb; MOSFET;

   Sammanfattning : In this thesis fabrication and optimization of vertical III-V Tunneling Field-Effect transistors was explored. Usage of vertical nanowires, allows for combination of materials with large lattice mismatch in the same nanowire structure. LÄS MER

5. 4. Black Liquor Scaling Propensity - Experimental Investigation in a Pilot Evaporator

   Författare :Mathias Gourdon; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; sodium carbonate; fouling; sodium sulphate; black liquor; incrustation; scaling; evaporation; falling film; evaporator; encrustation; kraft black liquor;

   Sammanfattning : Scaling in the recovery cycle of kraft pulp mills has long been recognised as a problem, especially in black liquor evaporators. Most problems are connected with the precipitation of sodium salts. LÄS MER

7. 5. Vertical Axis Wind Turbines : Tower Dynamics and Noise

   Författare :Erik Möllerström; Jonny Hylander; Fredric Ottermo; Göran Sidén; Hans Bernhoff; Mats Åbom; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; VAWT; H-rotor; eigenfrequency; semi-guy-wired tower; noise emission; sound power level;

   Sammanfattning : Vertical axis wind turbines (VAWTs) have with time been outrivaled by the today common and economically feasible horizontal axis wind turbines (HAWTs). However, VAWTs have several advantages such as the possibility to put the drive train at ground level, lower noise emissions and better scaling behavior which still make them interesting for research. LÄS MER