Sökning: "vapor doping"
Visar resultat 1 - 5 av 45 avhandlingar innehållade orden vapor doping.
1. Doping of Semiconductor Nanowires
Sammanfattning : In this thesis, in situ doping during growth of III-V semiconductor nanowires, primarily for photovoltaic applications, is investigated. The nanowires were grown by metalorganic vapor phase epitaxy (MOVPE), with gold seed particles. LÄS MER
2. III-V Nanowire Solar Cells: Growth and Characterization
Sammanfattning : To mitigate dangerous climate change, a transition to a new and sustainable energy system is needed. In this system, solar energy will need to be a key player. Prices of electricity made from solar cells have declined rapidly over the recent decades, making solar energy competitive in more markets. LÄS MER
3. Thermoelectric plastics: Structure-property relationships of P3HT
Sammanfattning : The advancing development of inter-connected small devices, so-called Internet of Things is increasing the demand for independent power sources. Heat is an abundant and often wasted source of energy, thermoelectric generators could be used to harvest this waste energy. Small devices such as heart-rate monitors or gas sensors etc. LÄS MER
4. Controlling Electronic and Geometrical Structure of Honeycomb-Lattice Materials Supported on Metal Substrates : Graphene and Hexagonal Boron Nitride
Sammanfattning : The present thesis is focused on various methods of controlling electronic and geometrical structure of two-dimensional overlayers adsorbed on metal surfaces exemplified by graphene and hexagonal boron nitride (h-BN) grown on transition metal (TM) substrates. Combining synchrotron-radiation-based spectroscopic and various microscopic techniques with in situ sample preparation, we are able to trace the evolution of overlayer electronic and geometrical properties in overlayer/substrate systems, as well as changes of interfacial interaction in the latter. LÄS MER
5. Chemical Vapor Depositionof Si and SiGe Films for High-Speed Bipolar Transistors
Sammanfattning : This thesis deals with the main aspects in chemical vapordeposition (CVD) of silicon (Si) and silicon-germanium (Si1-xGex) films for high-speed bipolar transistors.In situdoping of polycrystalline silicon (poly-Si)using phosphine (PH3) and disilane (Si2H6) in a low-pressure CVD reactor was investigated toestablish a poly-Si emitter fabrication process. LÄS MER