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Visar resultat 1 - 5 av 15 avhandlingar som matchar ovanstående sökkriterier.

  1. 1. Antimonide Heterostructure Nanowires - Growth, Physics and Devices

    Författare :Mattias Borg; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; GaSb; InSb; epitaxy; Nanowires; antimonides; tunnel field effect transistors; tunnel diode; InAsSb; Fysicumarkivet A:2012:Borg;

    Sammanfattning : Abstract in UndeterminedThis thesis investigates the growth and application of antimonide heterostructure nanowires for low-power electronics. In the first part of the thesis, GaSb, InSb and InAsSb nanowire growth is presented, and the distinguishing features of the growth are described. LÄS MER

  3. 2. InP/GaInP Nanowires for Tandem Junction Solar Cells : Growth, Processing, and Characterization

    Författare :Xulu Zeng; Fasta tillståndets fysik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowires; GaInP; InP; tandem; tunnel diode; solar cell;

    Sammanfattning : Semiconductor nanowire solar cells have achieved comparable efficiency to their planar counterparts with substantial reduction of material consumption. Tandem geometry is a path towards even higher efficiency. However, extensive studies are needed to reach this goal. LÄS MER

  4. 3. Vertical III-V Nanowire Tunnel Field-Effect Transistors : A Circuit Perspective

    Författare :Gautham Rangasamy; Nanoelektronik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low-Power Electronics; Self-Heating; Steep Slope Devices; Tunnel Field-Effect Transistors; Vertical Nanowire; III-V Semiconductors;

    Sammanfattning : The energy scaling of integrated circuits has reached its limit because the operating voltage of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) based switches has reached its minimum value. MOSFETs are limited by thermionic emission and cannot achieve a subthreshold swing (SS) below 60 mV/decade at room temperature. LÄS MER

  5. 4. UHV-CVD growth of Ge/Si nanostructures

    Författare :Vilma Zela; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductory physics; Fysik; Physics; Naturvetenskap; Si; Ge; Esaki diode; Halvledarfysik; Ge layer; Natural science; Ge Ilands; posiotioning;

    Sammanfattning : This thesis is based on the results concerning the epitaxial growth and characterization of silicon (Si) and germanium (Ge) nanostructures. The growth technique was the Ultra High Vacuum Chemical Vapor Deposition (UHV-CVD) that works in relatively low temperatures and low growth pressures. LÄS MER

  7. 5. Spin-diode effect and thermally controlled switching in magnetic spin-valves

    Författare :Sebastian Andersson; Vladislav Korenivski; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

    Sammanfattning : This thesis demonstrates two new device concepts that are based on the tunneling and giant magnetoresistance effects. The first is a semiconductor-free asymmetric magnetic double tunnel junction that is shown to work as a diode, while at the same time exhibiting a record high magnetoresistance. LÄS MER