Sökning: "transconductance"

Visar resultat 1 - 5 av 34 avhandlingar innehållade ordet transconductance.

1. 1. Graphene field-effect transistors for high frequency applications

   Författare :Muhammad Asad; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; high frequency; Graphene; transit frequency; transconductance; maximum frequency of oscillation; contact resistance; microwave electronics; field-effect transistors;

   Sammanfattning : Rapid development of wireless and internet communications requires development of new generation high frequency electronics based on new device concepts and new materials. The very high intrinsic velocity of charge carriers in graphene makes it promising new channel material for high frequency electronics. LÄS MER

3. 2. Millimeter and Sub-Millimeter Wave Integrated Active Frequency Down-Converters

   Författare :Yu Yan; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 145 GHz; self-oscillating mixer; mixer; conversion gain; millimeter wave; radar; mHEMT; noise figure; monolithic; sub-millimeter wave; InP; THz; resistive mixer; Gilbert mixer; DHBT; SiGe; 340 GHz; 220 GHz; FMCW; transconductance mixer; BiCMOS; transceiver; harmonic; GaAs;

   Sammanfattning : In recent years, the increasing amount of data transmission, the need for automotiveradars, and standoff imaging for security applications are the main factors that accelerateresearch in the millimeter and sub-millimeter wave frequency ranges. The semiconductorindustries have continuously developed their processes, which have opened upopportunities for manufacturing monolithically integrated circuits up to a few hundredGHz, based on transistor technologies. LÄS MER

4. 3. Linearity Enhancements of Receiver Front-end Circuits for Wireless Communication

   Författare :Mohammed Abdulaziz; Institutionen för elektro- och informationsteknik; []
   Nyckelord :CMOS; receivers; operational transconductance amplifiers; filtering; channel select filters; stability; low noise amplifiers; linearization; carrier aggregation; spectrum sensing;

   Sammanfattning : Technology scaling in advanced CMOS nodes has been very successful in reducing the cost and increasing the operating frequency, however, it has also resulted in reduced transistor intrinsic gain and increased thermal noise coefficient, and most importantly, deteriorated linearity performance. At the same time, advanced wireless communication standards offer ever increasing data rates and pose more stringent requirements on coexistence, leading to very stringent linearity requirements. LÄS MER

5. 4. Radio Frequency InGaAs MOSFETs

   Författare :Navya Sri Garigapati; NanoLund: Centre for Nanoscience; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V compound semiconductor; InGaAs MOSFET; Quantum well; Nanowire; Radio Frequency; Band structure calculation; k.p calculations; Strain engineering; ballistic electron transport; S-parameters;

   Sammanfattning : III-V-based Indium gallium arsenide is a promising channel material for high-frequency applications due to its superior electron mobility property. In this thesis, InGaAs/InP heterostructure radio frequency MOSFETs are designed, fabricated, and characterized. LÄS MER

7. 5. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

   Författare :Giuseppe Moschetti; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; metamorphic; high frequency; high electron mobility transistor HEMT ; low power; low noise.; InAs AlSb;

   Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. LÄS MER