Sökning: "through waveguide"

Visar resultat 1 - 5 av 47 avhandlingar innehållade orden through waveguide.

  1. 1. Exploiting the Terahertz Spectrum with Silicon Micromachining : Waveguide Components, Systems and Metrology

    Författare :James Campion; Joachim Oberhammer; Umer Shah; Robert M. Weikle II; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Terahertz; Silicon Micromachining; Waveguide; Waveguide System; Metrology; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : The terahertz spectrum (300 GHz - 3 THz) represents the final frontier for modern electronic and optical systems, wherein few low-cost, volume-manufacturable solutions exist. THz frequencies are of great scientific and commercial interest, with applications as diverse as radio astronomy, sensing and imaging and wireless communications. LÄS MER

  2. 2. Gap waveguide for packaging microstrip filters & investigation of transitions from planar technologies to ridge gap waveguide

    Författare :Astrid Algaba Brazalez; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; parallel plate mode; coupled line filter; microstrip circuit; packaging; Artificial magnetic conductor AMC ; perfect magnetic conductor PMC ; gap waveguide; transition.; coplanar waveguide CPW ;

    Sammanfattning : Gap waveguide technology has proved to constitute an effective alternative for the design of microwave passive components, due to its advantages with respect to traditional planar technologies and standard waveguides. There is no requirement for conductive contact between the two different metal pieces making up a gap waveguide prototype, since one of these pieces makes use of a textured surface that eliminates any possible leakage of the field through the gap to the surface of the other metal piece above it. LÄS MER

  3. 3. Designs and simulations of silicon-based microphotonic devices

    Författare :Daoxin Dai; Sailing He; Siegfried Janz; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; waveguide; silicon-on-insulator SOI ; arrayed waveguide grating AWG ; Elektronik; Electronics; Elektronik;

    Sammanfattning : The characteristics of a silicon-on-insulator (SOI) rib waveguide, including the bending loss of a multimode bent waveguide and the birefringence of a rib waveguide, are analyzed by using a finite-difference method (FDM). Based on a detailed analysis for a multimode bent waveguide, an appropriately designed multimode bent waveguide for reducing effectively the bending loss of the fundamental mode is realized. LÄS MER

  4. 4. Photonic devices with MQW active material and waveguide gratings : modelling and characterisation

    Författare :Nadeem Akram; Lars Thylén; Hartmut Hillmer; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Method of Lines; Grating; ARROW Waveguide; Semiconductor laser; quantum well; Photonics; Fotonik;

    Sammanfattning : The research work presented in this thesis deals with modelling, design and characterisation of passive and active optical waveguide devices. The rst part of the thesis is related to algorithm development and numerical modelling of planar optical waveguides and gratings using the Method of Lines (MoL). LÄS MER

  5. 5. InP DHBT Amplifiers and Circuit Packaging up to Submillimeter-Wave Frequencies

    Författare :Klas Eriksson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; InP; WR05; packaging; noise figure; substrate modes; WR03.; multiple layer interconnect; double heterojunction bipolar transistor DHBT ; G-band; wideband; H-band; waveguide transition; distributed amplifier DA ; millimeter-wave; amplifier; low-noise amplifier LNA ; membrane technology; waveguide module; submillimeter-wave;

    Sammanfattning : This thesis treats the design and characterization of amplifiers operating up tosubmillimeter-wave frequencies and packaging of such circuits into waveguidemodules. The circuits use an advanced indium phosphide (InP) double heterojunctionbipolar transistor (DHBT) process with a multilayer back-end. LÄS MER