Sökning: "threshold current"
Visar resultat 1 - 5 av 170 avhandlingar innehållade orden threshold current.
1. Linear, Non-Linear, and Synchronizing Spin Wave Modes in Spin Hall Nano-Oscillators
Sammanfattning : Spin Hall nano-oscillators (SHNOs) are nanoscale spintronic devices that generate microwave signals with highly tunable frequency. This thesis focuses on improving the signal quality of nanoconstriction-based SHNOs and also on developing a better understanding of their magnetization dynamics. LÄS MER
2. Dilute Nitride Lasers and Spectrally Engineered Semiconductor Laser Resonators
Sammanfattning : The first part of this thesis deals with long wavelength (1.2-1.3 um) InGaAs(N)multiple quantum-well (QW) lasers grown on GaAs, with the aim of understandingand improving their threshold and temperature characteristics. The epitaxialmaterial is grown by molecular beam epitaxy (MBE). LÄS MER
3. Development of traffic conflicts technique for different environments: A comparative study of pedestrian conflicts in Sweden and Jordan
Sammanfattning : This study is aimed at improving the current Swedish Traffic conflicts Technique [TCT] in relation to vehicle-pedestrian conflicts. The present definition of conflict severity appears to produce less severe conflicts than they might be, particularly if the relevant road user (RRU) is the pedestrian. LÄS MER
4. Improvement and Assessment of Two-Dimensional Resistivity Models Derived from Radiomagnetotelluric and Direct-Current Resistivity Data
Sammanfattning : Two-dimensional (2-D) models of electrical resistivity are improved by jointly inverting radiomagnetotelluric (RMT) and direct-current resistivity (DCR) data or by allowing for displacement currents in the inversion of RMT data collected on highly resistive bedrock. Uniqueness and stability of the 2-D models are assessed with a model variance and resolution analysis that allows for the non-linearity of the inverse problem. LÄS MER
5. Direct Extraction of MOS Transistor Current Model Parameters
Sammanfattning : This thesis presents a study of MOS transistor model parameter extraction. The objective of this study was to develop an efficient, accurate, robust extraction strategy which determines physically reasonable parameter values. The direct parameter extraction approach was chosen to meet these requirements. LÄS MER