Sökning: "surface-channel"
Visar resultat 1 - 5 av 6 avhandlingar innehållade ordet surface-channel.
1. Novel concepts for advanced CMOS : Materials, process and device architecture
Sammanfattning : The continuous and aggressive dimensional miniaturization ofthe conventional complementary-metal-oxide semiconductor (CMOS)architecture has been the main impetus for the vast growth ofIC industry over the past decades. As the CMOS downscalingapproaches the fundamental limits, unconventional materials andnovel device architectures are required in order to guaranteethe ultimate scaling in device dimensions and maintain theperformance gain expected from the scaling. LÄS MER
2. Vertical Nanowire High-Frequency Transistors
Sammanfattning : This thesis explores a novel transistor technology based on vertical InAs nanowires, which could be considered both for low-power high-frequency analog applications and for replacing Si CMOS in the continued scaling of digital electronics. The potential of this device - the vertical InAs nanowire MOSFET – lies in the combination of the outstanding transport properties of InAs and the improved electrostatic control of the gate-all-around geometry. LÄS MER
3. Metal Gate Technology for Advanced CMOS Devices
Sammanfattning : The development and implementation of a metal gate technology (alloy, compound, or silicide) into metal-oxide-semiconductor field effect transistors (MOSFETs) is necessary to extend the life of planar CMOS devices and enable further downscaling. This thesis examines possible metal gate materials for improving the performance of the gate stack and discusses process integration as well as improved electrical and physical measurement methodologies, tested on capacitor structures and transistors. LÄS MER
4. Investigation of Novel Metal Gate and High-κ Dielectric Materials for CMOS Technologies
Sammanfattning : The demands for faster, smaller, and less expensive electronic equipments are basically the driving forces for improving the speed and increasing the packing density of microelectronic components. Down-scaling of the devices is the principal method to realize these requests. LÄS MER
5. Modeling and characterization of novel MOS devices
Sammanfattning : Challenges with integrating high-κ gate dielectric,retrograde Si1-xGexchannel and silicided contacts in future CMOStechnologies are investigated experimentally and theoreticallyin this thesis. ρMOSFETs with either Si or strained Si1-xGex surface-channel and different high-κgate dielectric are examined. LÄS MER