Sökning: "surface segregations"

Hittade 3 avhandlingar innehållade orden surface segregations.

  1. 1. Ab Initio Simulations of Transition Metal Alloys: Towards the Multiscale Modeling

    Författare :Leonid Pourovskii; Igor Abrikosov; Bruce Harmon; Uppsala universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Physics; first principles simulations; transition metal alloys; surface segregations; fully-relativistic method; Monte Carlo method; Fysik; Physics; Fysik; fysik; Physics;

    Sammanfattning : The present thesis concerns applications of first principles electronic structure calculations in conjunction with methods of statistical mechanics for simulations of transition metal alloys both in the bulk and at surfaces.A fully relativistic generalization of the exact muffin-tin orbitals (EMTO) method has been developed. LÄS MER

  3. 2. On the analysis of cast structure and its changes during hot working of forging ingots

    Författare :Jan Sarnet; Hasse Fredriksson; Alec Mitchell; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Teknisk materialvetenskap;

    Sammanfattning : Forging ingots are hot worked to consolidate structural imperfections and refine the microstructure. Possible imperfections are segregations, porosities, cracks, and inclusions. In this thesis, techniques and methods for the characterisation of behaviour and properties of ingots and forgings. LÄS MER

  4. 3. UHV-CVD growth of Ge/Si nanostructures

    Författare :Vilma Zela; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductory physics; Fysik; Physics; Naturvetenskap; Si; Ge; Esaki diode; Halvledarfysik; Ge layer; Natural science; Ge Ilands; posiotioning;

    Sammanfattning : This thesis is based on the results concerning the epitaxial growth and characterization of silicon (Si) and germanium (Ge) nanostructures. The growth technique was the Ultra High Vacuum Chemical Vapor Deposition (UHV-CVD) that works in relatively low temperatures and low growth pressures. LÄS MER