Sökning: "surface passivation"

Visar resultat 21 - 25 av 65 avhandlingar innehållade orden surface passivation.

1. 21. Characterization of dielectric layers for passivation of 4H-SiC devices

   Författare :Maciej Wolborski; Anders Hallén; Lothar Frey; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrophysics; Elektrofysik;

   Sammanfattning : Silicon carbide rectifiers and MESFET switches are commercially available since 2001 and 2005 respectively. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance, four inch wafers are available and the next step of technology is set to be the six inch substrate wafers. LÄS MER

3. 22. Ge/high-k Gates for Monolithic 3D Integration

   Författare :Laura Zurauskaite; Per-Erik Hellström; Mikael Östling; Francois Andrieu; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Germanium; high-k; monolithic; 3D; germanium on insulator; GOI; germanium oxide; GeOx; Si-cap; Si-passivation; interface state density; Dit; low temperature; MOSFET; germanium; hög-permittivitetsdielektrika; monolitisk; 3D; germaniumpå- isolator; GOI; germaniumoxid; GeOx; kiselskikt; kiselpassivering; gränssnittsfälltäthet; Dit; låg temperatur; MOSFET; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Continuous scaling of transistor dimensions has been in the heart of semiconductorindustry for many years. Recently the scaling has been enabled by various performance boosters which resulted in increased processing complexity and cost, forcing the chip manufacturers to look for some alternative solutions. LÄS MER

4. 23. Engineering Surfaces of Solid-State Nanopores for Biomolecule Sensing

   Författare :Shiyu Li; Shi-Li Zhang; Michael Mayer; Uppsala universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; solid-state nanopores; surface engineering; DNA sensing; DNA polymerase; optical detection; lipid bilayer; hafnium oxide; electron beam induced deposition;

   Sammanfattning : Nanopores have emerged as a special class of single-molecule analytical tool that offers immense potential for sensing and characterizing biomolecules such as nucleic acids and proteins. As an alternative to biological nanopores, solid-state nanopores present remarkable versatility due to their wide-range tunability in pore geometry and dimension as well as their excellent mechanical robustness and stability. LÄS MER

5. 24. DFT calculations of initial localized corrosion of aluminum : Influence of aqueous ad-layer, chloride ions, and intermetallic particles

   Författare :Min Liu; Jinshan Pan; Ying Chen; KTH; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; aluminum alloys; alumina; chloride; surface adsorption; aqueous ad-layer; localized corrosion; corrosion initiation; work function; micro-galvanic effect; density-functional theory; Volta potential; scanning kelvin probe force microscopy; Kemi; Chemistry;

   Sammanfattning : Localized corrosion of aluminum (Al, here including Al alloys) involves a series of physico-chemical processes at the interface between the metal and the aqueous ad-layer or the aqueous solution. The mechanisms that govern localized corrosion are quite complex and have been the subject of many experimental studies. LÄS MER

7. 25. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors

   Författare :Hyung-Seok Lee; Carl-Mikael Zetterling; Tat-Sing Chow; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; current gain; specific on resistance RSP_ON ; breakdown voltage; forward voltage drop; surface recombination; ohmic contact.; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

   Sammanfattning : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. LÄS MER