Sökning: "surface passivation"
Visar resultat 21 - 25 av 65 avhandlingar innehållade orden surface passivation.
21. Characterization of dielectric layers for passivation of 4H-SiC devices
Sammanfattning : Silicon carbide rectifiers and MESFET switches are commercially available since 2001 and 2005 respectively. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance, four inch wafers are available and the next step of technology is set to be the six inch substrate wafers. LÄS MER
22. Ge/high-k Gates for Monolithic 3D Integration
Sammanfattning : Continuous scaling of transistor dimensions has been in the heart of semiconductorindustry for many years. Recently the scaling has been enabled by various performance boosters which resulted in increased processing complexity and cost, forcing the chip manufacturers to look for some alternative solutions. LÄS MER
23. Engineering Surfaces of Solid-State Nanopores for Biomolecule Sensing
Sammanfattning : Nanopores have emerged as a special class of single-molecule analytical tool that offers immense potential for sensing and characterizing biomolecules such as nucleic acids and proteins. As an alternative to biological nanopores, solid-state nanopores present remarkable versatility due to their wide-range tunability in pore geometry and dimension as well as their excellent mechanical robustness and stability. LÄS MER
24. DFT calculations of initial localized corrosion of aluminum : Influence of aqueous ad-layer, chloride ions, and intermetallic particles
Sammanfattning : Localized corrosion of aluminum (Al, here including Al alloys) involves a series of physico-chemical processes at the interface between the metal and the aqueous ad-layer or the aqueous solution. The mechanisms that govern localized corrosion are quite complex and have been the subject of many experimental studies. LÄS MER
25. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors
Sammanfattning : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. LÄS MER