Sökning: "surface passivation"

Visar resultat 11 - 15 av 65 avhandlingar innehållade orden surface passivation.

  1. 11. Dynamics of Photogenerated Charge Carriers in III-V Bulk and Nanowire Semiconductors

    Författare :Xianshao Zou; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Time-resolved spectroscopy; Group III-V semiconductor; Nanowires; Carrier recombination; Trapping; Passivation;

    Sammanfattning : As a solution to solving energy consumption and environment problems, photovoltaics has become one type of the promising devices to convert solar energy into electricity directly. In some special areas like in space, a kind of photovoltaics with lightweight and reliable properties is needed to supply power. LÄS MER

  3. 12. Synchrotron X-ray based characterization of technologically relevant III-V surfaces and nanostructures

    Författare :Andrea Troian; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; synchrotron radiation; III-V semiconductors; high-k oxides; passivation; doping; XPS; AP-XPS; SPEM; XRF; full field X-ray diffraction microscopy; Fysicumarkivet A:2019:Troian;

    Sammanfattning : Innovative design and materials are needed to satisfy the demand for efficient and scalable devices for electronic and opto-electronic applications, such as transistors, LEDs, and solar cells. Nanostructured III-V semiconductors are an appealing solution, combining the excellent functional properties of III-V materials with the flexibility typical of nanostructures, such as the nanowires (NWs) studied here. LÄS MER

  4. 13. GaN HEMT Low Frequency Noise Characterization for Low Phase Noise Oscillator Design

    Författare :Thi Ngoc Do Thanh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low frequency noise; flicker noise; phase noise; deposition method.; oscillator; VCO; GaAs pHEMT; MMIC; GaN HEMT; passivation; InGaP HBT;

    Sammanfattning : The thesis presents low frequency noise (LFN) characterization of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) for low phase noise oscillator design. First, GaN HEMT technology is benchmarked versus other transistor technologies, e.g. LÄS MER

  5. 14. Impact of Ionizing Radiation on 4H-SiC Devices

    Författare :Muhammad Usman; Anders Hallén; Einar Örn Sveinbjörnsson; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide; ionizing radiation; bipolar junction transistors; reliability; surface passivation; high-k dielectrics; MIS; radiation hardness;

    Sammanfattning : Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. LÄS MER

  7. 15. Advanced III-Nitride Technology for mm-Wave Applications

    Författare :Anna Malmros; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ohmic contact; passivation; InAlN; high frequency performance; GaN; InAlGaN; HEMT; electron trapping;

    Sammanfattning : Within wireless communication, there is a continuously growing need for more bandwidth due to an increasing number of users and data intense services. The development within sensor systems such as radars, is largely driven by the need for increased detection range and robustness. LÄS MER