Sökning: "strained germanium on insulator sGeOI pMOSFETs"

Hittade 1 avhandling innehållade orden strained germanium on insulator sGeOI pMOSFETs.

1. 1. Fabrication of Group IV Semiconductors on Insulator for Monolithic 3D Integration

   Författare :Ali Asadollahi; Mikael Östling; Paul R. Berger; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; monolithic three dimensional M3D integration; strained germanium on insulator sGeOI pMOSFETs; silicon silicon-germanium on insulator sSOI sSiGeOI nMOSFETs; Si0.5Ge0.5 strain-relaxed buffer SRB ; direct bonding; chemical mechanical polishing CMP ; compressively strained GeOI; tensile strained Si0.5Ge0.5OI;

   Sammanfattning : The conventional 2D geometrical scaling of transistors is now facing many challenges in order to continue the performance enhancement while decreasing power consumption. The decrease in the device power consumption is related to the scaling of the power supply voltage (Vdd) and interconnects wiring length. LÄS MER