Sökning: "sputter"
Visar resultat 1 - 5 av 80 avhandlingar innehållade ordet sputter.
1. Preparation and Characterization of Sputter Deposited Spectrally Selective Solar Absorbers
Sammanfattning : The optical efficiency of a commercially available sputter deposited spectrally selective solar absorber was improved. The main purposes were to decrease the thermal emittance, increase the solar absorbtance of the absorber and to protect the substrate from degradation due to environmental influence. LÄS MER
2. Magnetron Sputter Epitaxy of GaN
Sammanfattning : Electronic-grade GaN (0001) epilayers have been grown directly on Al2O3 (0001) substrates by reactive DC-magnetron sputter epitaxy (MSE) from a liquid Ga sputtering target in an Ar/N2 atmosphere. The as-grown GaN epitaxial film exhibit low threading dislocation density on the order of ≤ 1010 cm-2 obtained by transmission electron microscopy and modified Williamson-Hall plot. LÄS MER
3. Reactive Sputter Deposition of Functional Thin Films
Sammanfattning : Thin film technology is of great significance for a variety of products, such as electronics, anti-reflective or hard coatings, sensors, solar cells, etc. This thesis concerns the synthesis of thin functional films, reactive magnetron sputter deposition process as such and the physical and functional characterization of the thin films synthesized. LÄS MER
4. Magnetron Sputter Epitaxy of Group III-Nitride Semiconductor Nanorods
Sammanfattning : The III-nitride semiconductors family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and related ternary and quaternary alloys. The research interest on this group of materials is sparked by the direct bandgaps, and excellent physical and chemical properties. LÄS MER
5. Magnetron Sputter Epitaxy of GaN Epilayers and Nanorods
Sammanfattning : In this research, electronic-grade GaN(0001) epilayers and nanorods have been grown onto Al2O3(0001) and Si(111) substrates, respectively, by reactive magnetron sputter epitaxy (MSE) using liquid Ga as a sputtering target. MSE, employing ultra high vacuum conditions, high-purity source materials, and lowenergy ion assisted deposition from substrate biasing, is a scalable method, lending itself to large area GaN synthesis. LÄS MER