Sökning: "spin Hall effect"
Visar resultat 16 - 20 av 22 avhandlingar innehållade orden spin Hall effect.
16. Magnetotransport characterization of epitaxial graphene on SiC
Sammanfattning : Low-temperature magnetotransport is used to characterize graphene grown epitaxially on the silicon face of 4H silicon carbide (SiC/G). Observation of half-integer quantum Hall effect (QHE) in large Hall bars, patterned across several terraces of the SiC substrate, suggest that monolayer graphene grows continuously over defects. LÄS MER
17. Atomistic spin dynamics and relativistic effects in chiral nanomagnets
Sammanfattning : In this thesis, studies based on magnetization dynamics on atomic length scales are presented for a number of magnetic systems, where Dzyaloshinskii-Moriya (DM) interaction is present. First-principle methods, based on density functional theory (DFT), have been used to study the pairwise magnetic interactions, such as Heisenberg exchange and DM interaction, which are the crucial parameters for the helimagnetic systems. LÄS MER
18. Non-local behaviour from local interactions
Sammanfattning : With the discovery of the quantum Hall effect more than thirty years ago, a whole new field emerged—that of topological quantum matter. This field is now a very mature one, and many different aspects are covered in the literature. LÄS MER
19. Electronic Properties of Nanotubes
Sammanfattning : This thesis deals with various aspects of the electronic properties of carbon nanotubes and of generic nanotubes in magnetic fields. Carbon nanotubes are highly symmetric objects on the nanometer scale which show an interesting interplay of their geometry with electronic properties. LÄS MER
20. Engineering Epitaxial Graphene for Quantum Metrology
Sammanfattning : Quantum resistance metrology deals both with the precise and accurate measurement of electrical resistance, by utilizing the quantum hall effect (QHE) in two-dimensional electron gases (2DEGs) such as those based on gallium arsenide (GaAs). Due to the unique properties of graphene, and specifically epitaxial graphene grown on silicon carbide (SiC/G), quantum Hall resistance (QHR) standards based on graphene perform better in a wider parameter space (temperature, current and magnetic field) than conventional semiconducting materials. LÄS MER