Sökning: "single-electron devices"
Visar resultat 16 - 20 av 28 avhandlingar innehållade orden single-electron devices.
16. Electron Transport in Semiconductor Nanowires
Sammanfattning : In this thesis, semiconductor nanowires are studied from the point of view of growth and electrical properties. The growth of nanowires is done by chemical beam epitaxy (CBE), an ultra-high vacuum technique allowing a precise control of precursor deposition and low growth rates. LÄS MER
17. Electron Transport in Nanowire Quantum Devices
Sammanfattning : This thesis focuses on electron transport in semiconductor InAs/InP and InSb nanowire quantum devices. However, first the temperature dependence of classical charge transport in InSb nanowire field-effect transistors, FETs, is characterized, using InAs nanowire FETs as a reference. LÄS MER
18. Semiconductor Nanoelectronic Devices Based on Ballistic and Quantum Effects
Sammanfattning : As current silicon-based microelectronic devices and circuits are approaching their fundamental limits, the research field of nanoelectronics is emerging worldwide. With this background, the present thesis focuses on semiconductor nanoelectronic devices based on ballistic and quantum effects. The main material studied was a modulation doped In0. LÄS MER
19. Transport Studies of Local-Gate Defined Quantum Dots in Nanowires
Sammanfattning : This thesis focuses on electrical transport in semiconductor InAs nanowires grown by chemical beam epitaxy. Initially, transport length scales of homogeneous InAs n-type nanowires are characterized by low-temperature magnetoconductance measurements. The measurements show phase-coherent conductivity corrections. LÄS MER
20. Spin-dependant transport in lateral nano-devices based on magnetic tunnel junctions
Sammanfattning : This thesis is an experimental study of spin dependent transport in nanoscale ferromagnetic tunnel junction arrays and lateral multi-terminal devices with normal metal and superconducting spin transport channels. Two-, three-, and five-junction arrays have been fabricated in the form of lateral circuits and characterized using variable temperature magneto-transport measurements. LÄS MER