Sökning: "silicon oxide"

Visar resultat 1 - 5 av 192 avhandlingar innehållade orden silicon oxide.

  1. 1. Silicon nanowire based devices for More than Moore Applications

    Författare :Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
    Nyckelord :silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. LÄS MER

  3. 2. The Buried Oxide of Silicon on Insulator Materials

    Författare :Per Ericsson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; oxide defects; internal oxidation; aluminum oxide; wafer bonding; SOI; silicon on insulator; buried oxide;

    Sammanfattning : The buried oxide of silicon on insulator (SOI) wafers plays an important role in the operation of electronic devices made on such materials. The presence of defects in the buried oxide can seriously degrade the performance of a circuit. LÄS MER

  4. 3. Ultrathin Oxides in Metal-Oxide-Silicon Structures: Defects and Characterization

    Författare :Lars-Åke Ragnarsson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; PMA; interface state densities; silicon; aluminum oxide; Pb; ultrathin; RPECVD; MOS;

    Sammanfattning : The properties of metal-oxide-silicon (MOS) structures with ultrathin oxide layers (15-30 Å) have been investigated by means of electrical characterization. The characterization methods used were mainly capacitance voltage (C-V), current voltage (I-V) and constant voltage stress (I-t) measurements. LÄS MER

  5. 4. Chemical Mechanical Polishing of Silicon and Silicon Dioxide in Front End Processing

    Författare :Markus Forsberg; Jörgen Olsson; Jyrki Molarius; Uppsala universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; chemical mechanical polishing; chemical mechanical planarization; silicon; silicon dioxide; front end; shallow trench isolation; deep trench isolation; bipolar transistor; BiCMOS; wafer bonding; Elektronik; Electronics; Elektronik;

    Sammanfattning : Chemical mechanical polishing (CMP) has been used for a long time in the manufacturing of prime silicon wafers for the IC industry. Lately, other substrates, such as silicon-on-insulator has become in use which requires a greater control of the silicon CMP process. LÄS MER

  7. 5. Electronic Properties of Metal Oxide Films Studied by Core Level Spectroscopy

    Författare :Jan Hinnerk Richter; Anders Sandell; Håkan Rensmo; Anne Borg; Uppsala universitet; []
    Nyckelord :Physics; electron spectroscopy; metal oxide; chemical vapour deposition; ion insertion; metal organic; band alignment; zirconium; titanium; silicon; high k; Fysik;

    Sammanfattning : In this dissertation core level electron spectroscopy has been employed to study various aspects of metal oxide films grown under ultra-high vacuum conditions. Studies on in situ ion insertion of lithium into thin TiO2 systems were performed. LÄS MER