Sökning: "silicon carbide"
Visar resultat 16 - 20 av 164 avhandlingar innehållade orden silicon carbide.
16. Electro-thermal simulations and measurements of silicon carbide power transistors
Sammanfattning : The temperature dependent electrical characteristics of silicon carbide power transistors – 4H-SiC metal semiconductor field-effect transistors (MESFETs) and 4H-SiC bipolar junction transistors (BJTs) have been investigated through simulation and experimental approaches. Junction temperatures and temperature distributions in devices under large power densities have been estimated. LÄS MER
17. Waste-heat Recovery Using Thermoelectricity and Silicon Carbide Power Electronics
Sammanfattning : Energy consumption in the world has increased continuously due to a growing population and increased energy consumption per capita. Moreover, the largest part of consumed energy still comes from fossil sources which in 2016 was more than 130 PWh. LÄS MER
18. Bound excitons in silicon carbide
Sammanfattning : The investigation of silicon carbide (SiC) is strongly motivated by the potential of this material for various demanding electronic applications. The main virtue of SiC is its toughness compared to other more common semiconductors. LÄS MER
19. Compact Modeling of Si and SiC Power Diodes
Sammanfattning : .... LÄS MER
20. Process Design Kit and High-Temperature Digital ASICs in Silicon Carbide
Sammanfattning : Electronics such as microprocessors are highly demanded to monitor or control a process or operation in temperature critical (300 ºC to 600 °C) applications. State-of-the-art silicon-based integrated circuits (ICs) have been improved significantly throughout the years but mainly for a low-temperature ambient. LÄS MER
