Sökning: "silicon carbide 4H-SiC"

Visar resultat 6 - 10 av 57 avhandlingar innehållade orden silicon carbide 4H-SiC.

1. 6. Design and Fabrication of Silicon Carbide RF MOSFET for L- and S-band applications

   Författare :Gudjon Gudjonsson; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Metal-Oxide-Semiconductor Field-Effect-Transistor MOSFET ; 4H-SiC; Silicon Carbide SiC ;

   Sammanfattning : This thesis describes realisation of 4H-SiC radio-frequency metal-oxide-semiconductor field effect transistors (RF MOSFETs). Such transistors are in principle very attractive devices for high power and high frequency electronics. They are intended as a direct replacement for their silicon counterparts, offering higher power. LÄS MER

3. 7. Electrical contacts, Ohmic and Schottky, to 4H-Silicon Carbide for device applications

   Författare :Sang-Kwon Lee; KTH; []
   Nyckelord :silicon carbice; Ohmic; Schottky contacts; co-evaporation; current-voltage; capacitance-voltage measurement; power device; 4H-SiC; TLM;

   Sammanfattning : .... LÄS MER

4. 8. Electrical properties of thermal oxides on SiC manufactured in an alumina furnace

   Författare :Fredrik Allerstam; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; 6H-SiC; 4H-SiC; Silicon carbide; MOS; TDRC; CV; thermal dielectric relaxation current; interface states;

   Sammanfattning : A process to achieve high inversion channel mobility in 4H-SiC MOSFETs is needed to enable manufacturing of devices for high power applications. In this thesis, investigations on the electrical properties of oxides produced in an alumina furnace are presented. LÄS MER

5. 9. SiC CMOS and memory devices for high-temperature integrated circuits

   Författare :Mattias Ekström; Carl-Mikael Zetterling; B. Gunnar Malm; Tobias Erlbacher; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; bismuth titanate Bi4Ti3O12 ; CMOS; ferroelectric capacitor; field oxide; inverter; metallisation; metal oxide semiconductor field effect transistor MOSFET ; ohmic contacts; ring oscillator; semiconductor processing; silicon carbide 4H-SiC ; CMOS; ferroelektrisk kondensator; fältoxid; halvledartillverkning; inverterare; kiselkarbid 4H-SiC ; metallisering; MOSFET; ohmska kontakter; ringoscillator; vismuttitanat Bi4Ti3O12 ; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : High-temperature electronics find use in extreme environments, like data logging in downhole drilling for geothermal energy production, inside of high-temperature turbines, industrial gas sensors and space electronics. The simplest systems use a sensor and a transmitter, but more advance electronic systems would additionally require a microcontroller with memory. LÄS MER

7. 10. Processing and characterization of silicon carbide (6H-SiC and 4H-SiC) contacts for high power and high temperature device applications

   Författare :Sang Kwon Lee; KTH; []
   Nyckelord :Silicon carbide; ohmic and schottky contacts; co-evaporation; current-voltage; powre devices; nano-particles; Schottky barrier height lowering; TLM structures;

   Sammanfattning : Silicon carbide is a promising wide bandgap semiconductormaterial for high-temperature, high-power, and high-frequencydevice applications. However, there are still a number offactors that are limiting the device performance. LÄS MER