Sökning: "silicon carbide 4H-SiC"

Visar resultat 1 - 5 av 50 avhandlingar innehållade orden silicon carbide 4H-SiC.

  1. 1. High-Temperature Radio Circuits in Silicon Carbide Bipolar Technology

    Författare :Muhammad Waqar Hussain; Ana Rusu; Florin Udrea; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; 4H-SiC; active down-conversion mixer; BJT; EM simulations; silicon carbide; high-temperature; IF amplifier; LTCC; negative resistance oscillator; passives; RF circuits; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : High-temperature electronics find many niche applications in downhole drilling, aviation, automotive and future exploration of inner planets like Venus and Mercury. Past studies have shown the potential of silicon carbide (SiC) electronics for catering these extreme temperature applications. LÄS MER

  2. 2. Design and Fabrication of Silicon Carbide RF MOSFET

    Författare :Gudjon Gudjonsson; Chalmers University of Technology; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Metal-Oxide-Semiconductor Field-Effect-Transistor MOSFET ; Silicon Carbide SiC ;

    Sammanfattning : .... LÄS MER

  3. 3. Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications

    Författare :Daniel Johannesson; Hans-Peter Nee; Staffan Norrga; Muhammad Nawaz; Alberto Castellazzi; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Current Filamentation; Device Characterization; Dynamic Avalanche; JTE Structure; Junction Termination Extension Design; SiC BJT; SiC GTO Thyristor; SiC IGBT; SiC MOSFET; SiC PiN Diode; Silicon Carbide; TCAD Simulation; Wide bandgap device; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : The increased awareness of the on-going climate change accelerates the electric energy system transformation from fossil-fueled power sources towards systems with larger portions of renewable energy sources. Moreover, the grid infrastructure requires reinforcements to cope with increasing electrical energy demand. LÄS MER

  4. 4. Radiation Hardness of 4H-SiC Devices and Circuits

    Författare :Sethu Saveda Suvanam; Anders Hallén; Carl-Mikael Zetterling; Ulrike Grossner; KTH; []
    Nyckelord :Silicon carbide; radiation hardness; protons; gamma radiation; bipolar junction transistors; aluminium oxide; surface recombination.; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Advances in space and nuclear technologies are limited by the capabilities of the conventional silicon (Si) electronics. Hence, there is a need to explore materials beyond Si with enhanced properties to operate in extreme environments. In this regards, silicon carbide (4H-SiC), a wide bandgap semiconductor, provides suitable solutions. LÄS MER

  5. 5. Impact of Ionizing Radiation on 4H-SiC Devices

    Författare :Muhammad Usman; Anders Hallén; Einar Örn Sveinbjörnsson; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide; ionizing radiation; bipolar junction transistors; reliability; surface passivation; high-k dielectrics; MIS; radiation hardness;

    Sammanfattning : Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. LÄS MER