Sökning: "silicides"

Visar resultat 11 - 15 av 24 avhandlingar innehållade ordet silicides.

  1. 11. Structure and stability trends in the platinum metal-silicon systems

    Författare :Kenneth Göransson; Uppsala universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Chemistry; Transition metal silicides; electronic band structure; monosilicides; FeSi structure type; MnP structure type; Kemi; Chemistry; Kemi; Inorganic Chemistry; oorganisk kemi;

    Sammanfattning : The stability of group 8-10 silicides has been studied by LMTO-ASA band structurecalculations. In the Rh-Si and Ir-Si systems the lowest calculated heat of formation isfound in compounds near the equiatomic composition. LÄS MER

  3. 12. The Structural Basis for Magnetic Order in New Manganese Compounds

    Författare :Therese Eriksson; Yvonne Andersson; Helmer Fjellvåg; Uppsala universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Inorganic chemistry; Crystal structure; Magnetic structure; Manganese compounds; Transition metal silicides; Transition metal germanides; Magnetic frustration; Neutron powder diffraction; X-ray diffraction; Magnetisation measurements; DFT; Oorganisk kemi; Inorganic chemistry; Oorganisk kemi;

    Sammanfattning : Materials with new or improved properties are crucial for technological development. To provide the foundation for future successful products, it is important to prepare and characterise new chemical compounds that could show unusual properties. LÄS MER

  4. 13. Contacts on Silicon Carbide by Use of Nickel and Tantalum ---Preparation and Characterisation

    Författare :Yu Cao; Chalmers tekniska högskola; []
    Nyckelord :Keywords: Silicon Carbide; Metal Contact; Thin Films; Preferential Etching; Interfacial Reaction; effect; Nickel; Tantalum; #955; Depth Profile; I-V Characteristics.;

    Sammanfattning : Silicon carbide (SiC) is one of the attractive semiconductors due to its good electrical, thermal and mechanical properties. It is a promising material for high temperature, high power and high frequency application. Reliable electrodes are always necessary to utilise SiC for electronic devices. LÄS MER

  5. 14. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

    Författare :Zhen Zhang; Shi-Li Zhang; Tsu-Jae King Liu; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; Electronics; Elektronik;

    Sammanfattning : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. LÄS MER

  7. 15. The use of self-aligned Ti silicide in integrated Si technology

    Författare :Wlodek Kaplan; KTH; []
    Nyckelord :;

    Sammanfattning : The performance and cost efficiency of integrated circuits(IC) are constantly improved by a miniaturization of theindividual device dimensions. As a consequence, the materialand electrical properties of conductors and contacts becomecritical, and fabrication technology development meets newchallenges from the continuous reduction of devicedimensions. LÄS MER