Sökning: "shallow doping"

Visar resultat 1 - 5 av 11 avhandlingar innehållade orden shallow doping.

  1. 1. The influence of process-induced defects on electrical properties of silicon junctions

    Författare :Gert I. Andersson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; tunneling; ; silicon emitter junctions; discrete conductance fluctuation; shallow doping; deep-level transient spectroscopy;

    Sammanfattning : .... LÄS MER

  3. 2. Doping of high-Al-content AlGaN grown by MOCVD

    Författare :Daniel Nilsson; Anelia Kakanakova- Georgieva; Erik Janzén; Michelle Moram; Linköpings universitet; []
    Nyckelord :;

    Sammanfattning : The high-Al-content AlxGa1-xN, x > 0.70, is the principal wide-band-gap alloy system to enable the development of light-emitting diodes operating at the short wavelengths in the deep-ultraviolet, λ < 280 nm. LÄS MER

  4. 3. Source and drain engineering in SiGe-based pMOS transistors

    Författare :Christian Isheden; Mikael Östling; Simon Deleonibus; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; SiGe; source drain; shallow junctions; pMOS; process integration; CVD; epitaxy; etching; Ni silicide; contact resistivity; Elektronik; Electronics; Elektronik;

    Sammanfattning : A new shallow junction formation process, based on selective silicon etching followed by selective growth of in situ B-doped SiGe, is presented. The approach is advantageous compared to conventional ion implantation followed by thermal activation, because perfectly abrupt, low resistivity junctions of arbitrary depth can be obtained. LÄS MER

  5. 4. Device characteristics of sublimation grown 4H-SiC layers

    Författare :Rafal Ciechonski; Linköpings universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. LÄS MER

  7. 5. Deep levels in SiC

    Författare :Franziska C. Beyer; Erik Janzén; Carl Hemmingsson; Jörg Weber; Linköpings universitet; []
    Nyckelord :NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. LÄS MER