Sökning: "semiconductor surfaces"
Visar resultat 11 - 15 av 85 avhandlingar innehållade orden semiconductor surfaces.
11. Photoelectron Spectroscopy Studies of III-V Semiconductor Systems
Sammanfattning : Photoelectron spectroscopy has been used as a main tool to study a number of III-V semiconductor surfaces. This thesis includes studies of a surface reaction, As/InP(110), thin heteroepitaxial layers, InAs on GaAs(111)A and GaAs on AlAs(100), and a diluted magnetic semiconductor, Ga1-xMnxAs. LÄS MER
12. STM studies of overlayers on semiconductor or insulator surfaces
Sammanfattning : Scanning tunneling microscopy (STM) operated in ultra-high vacuum (UHV) has been used to study overlayers on semiconductor or insulator surfaces. The overlayers have been deposited by magnetron sputtering, thermal evaporation or by gas exposure, and the investigated material systems include Mo on MgO, Ni on SiC, Sn on Si(lll), C on Si(lO0) and O on Si(lll). LÄS MER
13. Adatoms, Quasiparticles & Photons : The Multifaceted World of Photoelectron Spectroscopy
Sammanfattning : The experimental work presented in this thesis is based on a wide assortment of very advanced and highly sophisticated photoelectron spectroscopy (PES) techniques. The objective of the present study has been to reveal and understand the electronic structure and electron dynamics in a broad spectrum of materials, ranging from wide band gap oxides, via semiconductors along with metals, and finally high-temperature superconductors. LÄS MER
14. Epitaxial growth of semiconductor nanowires
Sammanfattning : This thesis describes the results obtained from investigations carried out on epitaxially grown III-V semiconductor nanowires aimed at improving our understanding of and knowledge on the growth mechanism of nanowires. This is important to be able to control their growth, in order to make future applications possible. LÄS MER
15. Thin Mn silicide and germanide layers studied by photoemission and STM
Sammanfattning : The research presented in this thesis concerns experimental studies of thin manganese silicide and germanide layers, grown by solid phase epitaxy on the Si(111)7×7 and the Ge(111)c(2×8) surfaces, respectively. The atomic and electronic structures, as well as growth modes of the epitaxial Mn-Si and Mn-Ge layers, were investigated by low-energy electron diffraction (LEED), angle-resolved photoelectron spectroscopy (ARPES), core-level spectroscopy (CLS), and scanning tunneling microscopy and spectroscopy (STM and STS). LÄS MER