Sökning: "semiconductor quantum dots"

Visar resultat 1 - 5 av 82 avhandlingar innehållade orden semiconductor quantum dots.

  1. 1. Carrier dynamics in semiconductor quantum dots

    Detta är en avhandling från Stockholm : KTH

    Författare :Jörg Siegert; Ari Friberg; Jesper Mørk; [2006]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; quantum dots; photoluminescence; time-resolved; spectroscopy; semiconductor; NATURAL SCIENCES Physics Other physics Optics; NATURVETENSKAP Fysik Övrig fysik Optik;

    Sammanfattning : This thesis presents results of time-resolved photoluminescence experiments conducted on several different self-assembled InGaAs/GaAs and InAs/GaAs semiconductor quantum dot (QD) structures. Depending on the application in mind, different structural, electronic or optical properties have a different weight of importance. LÄS MER

  2. 2. Green Chemical Synthesis of II-VI Semiconductor Quantum Dots

    Detta är en avhandling från Stockholm : KTH Royal Institute of Technology

    Författare :Robina Shahid; Mamoun Muhammed; Gunnar Westin; [2012]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductor; Quantum Dots; Microwave; Ionic Liquids; Green Chemical Syntheis; Quantum Confinement; Optical Properties;

    Sammanfattning : Nanotechnology is the science and technology of manipulating materials at atomic and molecular scale with properties different from bulk. Semiconductor QDs are important class of nanomaterials with unique physical and chemical properties owing to the quantum confinement effect. LÄS MER

  3. 3. Optical spectroscopy of InGaAs quantum dots

    Detta är en avhandling från Linköping : Linköping University Electronic Press

    Författare :Arvid Larsson; Per Olof Holtz; Artur Zrenner; [2011]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; quantum dot; semiconductor; optical properties; spin; transport; wetting layer; polarization; kvantprick; halvledare; optiska egenskaper; spin; TECHNOLOGY Electrical engineering; electronics and photonics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik; TECHNOLOGY Materials science; TEKNIKVETENSKAP Teknisk materialvetenskap; NATURAL SCIENCES Physics Condensed matter physics; NATURVETENSKAP Fysik Kondenserade materiens fysik; NATURAL SCIENCES Physics Condensed matter physics Semiconductor physics; NATURVETENSKAP Fysik Kondenserade materiens fysik Halvledarfysik;

    Sammanfattning : The work presented in this thesis deals with optical studies of semiconductor quantum dots (QDs) in the InGaAs material system. It is shown that for self-assembled InAs QDs, the interaction with the surrounding GaAs barrier and the InAs wetting layer (WL) in particular, has a very large impact on their optical properties. LÄS MER

  4. 4. Semiconductor Nanoelectronic Devices Based on Ballistic and Quantum Effects

    Detta är en avhandling från Lund University (Media-Tryck)

    Författare :Jie Sun; [2009]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductor; Quantum Dots; Ballistic Transport; InGaAs InP 2DEG; Nanoelectronics;

    Sammanfattning : As current silicon-based microelectronic devices and circuits are approaching their fundamental limits, the research field of nanoelectronics is emerging worldwide. With this background, the present thesis focuses on semiconductor nanoelectronic devices based on ballistic and quantum effects. The main material studied was a modulation doped In0. LÄS MER

  5. 5. Spectroscopy of semiconductor quantum dots

    Detta är en avhandling från Linköping : Linköpings universitet

    Författare :Mats Larsson; James L. Merz; [2005]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURAL SCIENCES; NATURVETENSKAP;

    Sammanfattning : Quantum dots in the Si/Ge and InAs/GaAs materials systems are examined by means of photoluminescence. The spectroscopic study of Si/Ge quantum dots has demonstrated two different radiative recombination channels in the type II band alignment: The spatially direct transition inside the dot and the spatially indirect transition across the dot interface. LÄS MER