Sökning: "semiconductor device modeling"

Visar resultat 6 - 10 av 20 avhandlingar innehållade orden semiconductor device modeling.

  1. 6. Selective Epitaxy of Indium Phosphide and Heteroepitaxy of Indium Phosphide on Silicon for Monolithic Integration

    Författare :Fredrik Olsson; Sebastian Lourdudoss; Shigeya Naritsuka; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductor Physics; Semiconductor physics; Halvledarfysik;

    Sammanfattning : A densely and monolithically integrated photonic chip on indium phosphide is greatly in need for data transmission but the present day’s level of integration in InP is very low. Silicon enjoys a unique position among all the semiconductors in its level of integration. LÄS MER

  3. 7. InP HEMT Technology and Applications

    Författare :Anders Mellberg; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Indium phosphide InP ; cryogenic LNA; high electron mobility transistor HEMT ; metal-insulator-metal capacitor; MODFET; thin film resistor; semiconductor device fabrication; MMIC;

    Sammanfattning : Indium phosphide high electron mobility transistors (InGaAs/InAlAs/InP HEMTs) exhibit the highest cut-off frequencies and the lowest microwave noise figures of all transistor technologies. Both InP HEMT technology and associated circuit demonstrators are therefore interesting to explore further. LÄS MER

  4. 8. Optimization of LDMOS Transistor in Power Amplifiers for Communication Systems

    Författare :Ahsan-Ullah Kashif; Qamar-ul Wahab; Christer Svensson; Joachim Wurfl; Linköpings universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; RF-LDMOS; power amplifiers; technology CAD; load-pull; non-linear analysis; and switching analysis; Semiconductor physics; Halvledarfysik;

    Sammanfattning : The emergence of new communication standards has put a key challenge for semiconductor industry to develop RF devices that can handle high power and high data rates simultaneously. The RF devices play a key role in the design of power amplifiers (PAs), which is considered as a heart of base-station. LÄS MER

  5. 9. Characterization of Microwave Transistors for Robust Receivers and High Efficiency Transmitters

    Författare :Mattias Thorsell; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; noise modeling; access resistance; self-heating; AlGaN GaN HEMT; thermal characterization; active load-pull; load modulation;

    Sammanfattning : The next generation of integrated transceiver front-ends needs both robustlow noise amplifiers and high power amplifiers on a single-chip. The AluminiumGallium Nitride / Gallium Nitride (AlGaN/GaN) High Electron MobilityTransistors (HEMT) is a suitable semiconductor technology for this purposedue to its high breakdown voltage and high electron mobility. LÄS MER

  7. 10. Physical modeling of on-state losses in bipolar Si and SiC power devices

    Författare :Olof Tornblad; KTH; []
    Nyckelord :;

    Sammanfattning : Power losses affect both the installation- and long-term cost of power electronic systems. The installation cost is related to the fatt that power losses in silicon power devices generate heat and make installation of heat sinks and water cooling necessary. If self-heating effects are strong, lotal overheating can eventually lead to device failure. LÄS MER