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Visar resultat 1 - 5 av 6 avhandlingar som matchar ovanstående sökkriterier.
1. Vertical III-V Nanowire Transistors for Low-Power Electronics
Sammanfattning : Power dissipation has been the major challenge in the downscaling of transistor technology. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have struggled to keep a low power consumption while still maintaining a high performance due to the low carrier mobilities of Si but also due to their inherent minimum inverse subthreshold slope (S ≥ 60 mV/dec) which is limited by thermionic emission. LÄS MER
2. Atomic and Electronic Structure of III-V Semiconductor Surfaces
Sammanfattning : The atomic and electronic structure of clean and Cs-perturbed III-V semiconductors was studied by angle-resolved photoelectron spectroscopy (ARPES), surface core level spectroscopy (SCLS), and scanning tunneling microscopy (STM). The work can be divided into three parts, dealing with low-index sur-faces, high-index surfaces, and special features of InAs. LÄS MER
3. Epitaxial Growth, Processing and Characterization of Semiconductor Nanostructures
Sammanfattning : This thesis deals with the growth, processing and characterization of nano-sized structures, eg., self-assembled quantum dots and nano-wires. LÄS MER
4. Influence of Seed Particle Material, Preparation, and Dynamics on Nanowire Growth
Sammanfattning : Semiconducting nanowires have attracted scientific attention for more than 20 years due to their potential applications in electronic devices, as sensors, and in solid state lighting. These applications require high quality nanowires to begin with. LÄS MER
5. Photon Upconversion in Heavily Doped Semiconductors
Sammanfattning : In this thesis the luminescence properties of highly doped semiconductors are studied with focus on degenerately n-doped InP. It is demonstrated how photoluminescence measurements on degenerately doped semiconductors allow an estimation of the doping concentration without need for electrical contacts. LÄS MER