Sökning: "saturation velocity"

Visar resultat 1 - 5 av 43 avhandlingar innehållade orden saturation velocity.

1. 1. Impact of adjacent dielectrics on the high-frequency performance of graphene field-effect transistors

   Författare :Muhammad Asad; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; high-frequency electronics; Graphene; transit frequency; contact resistance; MOGFETs; drift velocity; field-effect transistors; saturation velocity; maximum frequency of oscillation; diamond;

   Sammanfattning : Transistors operating at high frequencies are the basic building blocks of millimeter wave communication and sensor systems. The high velocity and mobility of carriers in graphene can open ways for development of ultra-fast group IV transistors with similar or even better performance than that achieved with III-V based semiconductors. LÄS MER

3. 2. Charge carrier transport in field-effect transistors with two-dimensional electron gas channels studied using geometrical magnetoresistance effect

   Författare :Isabel Harrysson Rodrigues; Chalmers tekniska högskola; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; low-field mobility; high-electron-mobility transistor; velocity saturation; quasi-ballistic charge carrier transport; two-dimensional electron gas; charge carrier scattering mechanisms; geometrical magnetoresistance; low noise and high frequency applications; velocity peak; graphene field-effect transistor; charge carrier trans- port;

   Sammanfattning : During the last decades, significant efforts have been made to exploit the excellent and promising electronic properties exhibited by field-effect transistors (FETs) with two-dimensional electron gas (2DEG) channels. The most prominent representatives of this class of devices are high-electron-mobility transistors (HEMTs) and graphene field-effect transistors (GFETs). LÄS MER

4. 3. Graphene field-effect transistors and devices for advanced high-frequency applications

   Författare :Marlene Bonmann; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; traps; graphene; self-heating; field-effect transistors; remote phonons; carrier transport; saturation velocity; microwave devices; impurities and defects;

   Sammanfattning : New device technologies and materials are continuously investigated, in order to increase the bandwidth of high-speed electronics, thereby extending data rate and range of applications. The 2D-material graphene, with its intrinsically extremely high charge carrier velocity, is considered as a promising new channel material for advanced high frequency field-effect transistors. LÄS MER

5. 4. Effects of impurities on charge transport in graphene field-effect transistors

   Författare :Marlene Bonmann; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; carrier transport; electron and hole mobility; impurities; traps; graphene; field-effect transistors; microwave devices; saturation velocity; remote phonons;

   Sammanfattning : In order to push the upper frequency limit of high speed electronics further, thereby extending the range of applications, new device technologies and materials are continuously investigated. The 2D material graphene, with its intrinsically extremely high room temperature charge carrier velocity, is regarded as a promising candidate to push the frequency limit even further. LÄS MER

7. 5. Charge Transport in Single-crystalline CVD Diamond

   Författare :Markus Gabrysch; Jan Isberg; Mats Leijon; Milos Nesladek; Uppsala universitet; []
   Nyckelord :CVD diamond; wide-bandgap semiconductor; single-crystalline diamond; carrier transport; time-of-flight; drift velocity; mobility; compensation; pair-creation; electronic devices; diamond detector; diamond diode;

   Sammanfattning : Diamond is a semiconductor with many superior material properties such as high breakdown field, high saturation velocity, high carrier mobilities and the highest thermal conductivity of all materials. These extreme properties, as compared to other (wide bandgap) semiconductors, make it desirable to develop single-crystalline epitaxial diamond films for electronic device and detector applications. LÄS MER