Sökning: "resistance metrology"

Visar resultat 1 - 5 av 6 avhandlingar innehållade orden resistance metrology.

  1. 1. Epitaxial Graphene Technology for Quantum Metrology

    Författare :Thomas Yager; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; charge neutrality; optical microscopy; Epitaxial graphene; resistance metrology; silicon carbide; quantum Hall effect; electron transport; bilayer graphene;

    Sammanfattning : Graphene grown on silicon carbide by high-temperature annealing (SiC/G) is a strong contender in the race towards large-scale graphene electronics applications. The unique electronic properties of this system lead to a remarkably robust and accurate Hall resistance quantisation of 0. LÄS MER

  3. 2. Engineering Epitaxial Graphene for Quantum Metrology

    Författare :Hans He; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Epitaxial Graphene; Magnetotransport; Quantum Resistance Metrology; Chemical Doping;

    Sammanfattning : Quantum resistance metrology deals both with the precise and accurate measurement of electrical resistance, by utilizing the quantum hall effect (QHE) in two-dimensional electron gases (2DEGs) such as those based on gallium arsenide (GaAs). Due to the unique properties of graphene, and specifically epitaxial graphene grown on silicon carbide (SiC/G), quantum Hall resistance (QHR) standards based on graphene perform better in a wider parameter space (temperature, current and magnetic field) than conventional semiconducting materials. LÄS MER

  4. 3. Molecular Doping of Epigraphene for Device Applications

    Författare :Hans He; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Molecular Doping; Graphene; epitaxial graphene; THz; Metrology; Hall Effect;

    Sammanfattning : Epitaxial graphene grown on silicon carbide, or epigraphene, offers in principle a suitable platform for electronic applications of graphene which require scalable, reproducible, and high-quality material. However, one of the main drawbacks of epigraphene lies in the difficulty in controlling its carrier density, which hinders its usefulness in future applications. LÄS MER

  5. 4. Enabling technologies for scalable graphene electronics

    Författare :Naveen Shetty; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; edge contact; Hall effect; graphene; 2d-tech; array; 1 f; metrology;

    Sammanfattning : This thesis addresses the challenges in scaling up graphene-based technologies, with a focus on the epitaxial growth of graphene (epigraphene) over SiC substrates and the establishment of reliable low-contact resistance electrical contacts. The scalable graphene growth and contact fabrication have enabled the development of three epigraphene-based devices, including large-scale Quantum Hall Arrays, highly sensitive Hall effect magnetometers with minimal noise, and quantum-limited ultraviolet (UV) detectors. LÄS MER

  7. 5. Quantum Hall devices on epitaxial graphene: towards large-scale integration

    Författare :Arseniy Lartsev; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; quantum Hall effect; resistance metrology; epitaxial graphene; quantum Hall array; magnetotransport;

    Sammanfattning : Quantum Hall devices have been used as the primary standard of electrical resistance for over two decades, and they are unlikely to be replaced in this role any time soon. The work presented in this thesis was being done towards the goal of establishing epitaxial graphene on silicon carbide as a new material of choice for these devices. LÄS MER