Sökning: "resistance metrology"

Hittade 4 avhandlingar innehållade orden resistance metrology.

  1. 1. Epitaxial Graphene Technology for Quantum Metrology

    Författare :Thomas Yager; [2015]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; charge neutrality; optical microscopy; Epitaxial graphene; resistance metrology; silicon carbide; quantum Hall effect; electron transport; bilayer graphene;

    Sammanfattning : Graphene grown on silicon carbide by high-temperature annealing (SiC/G) is a strong contender in the race towards large-scale graphene electronics applications. The unique electronic properties of this system lead to a remarkably robust and accurate Hall resistance quantisation of 0. LÄS MER

  2. 2. Engineering Epitaxial Graphene for Quantum Metrology

    Detta är en avhandling från Gothenburg : Chalmers tekniska högskola

    Författare :Hans He; [2018]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; Epitaxial Graphene; Magnetotransport; Quantum Resistance Metrology; Chemical Doping;

    Sammanfattning : Quantum resistance metrology deals both with the precise and accurate measurement of electrical resistance, by utilizing the quantum hall effect (QHE) in two-dimensional electron gases (2DEGs) such as those based on gallium arsenide (GaAs). Due to the unique properties of graphene, and specifically epitaxial graphene grown on silicon carbide (SiC/G), quantum Hall resistance (QHR) standards based on graphene perform better in a wider parameter space (temperature, current and magnetic field) than conventional semiconducting materials. LÄS MER

  3. 3. Quantum Hall devices on epitaxial graphene: towards large-scale integration

    Detta är en avhandling från Gothenburg : Chalmers tekniska högskola

    Författare :Arseniy Lartsev; [2015]
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; quantum Hall effect; resistance metrology; epitaxial graphene; quantum Hall array; magnetotransport;

    Sammanfattning : Quantum Hall devices have been used as the primary standard of electrical resistance for over two decades, and they are unlikely to be replaced in this role any time soon. The work presented in this thesis was being done towards the goal of establishing epitaxial graphene on silicon carbide as a new material of choice for these devices. LÄS MER

  4. 4. Magnetotransport characterization of epitaxial graphene on SiC

    Detta är en avhandling från Gothenburg : Chalmers tekniska högskola

    Författare :Samuel Lara Avila; [2012]
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; quantum metrology; quantum Hall effect; epitaxial graphene; many-electron systems; weak localization; magnetotransport;

    Sammanfattning : Low-temperature magnetotransport is used to characterize graphene grown epitaxially on the silicon face of 4H silicon carbide (SiC/G). Observation of half-integer quantum Hall effect (QHE) in large Hall bars, patterned across several terraces of the SiC substrate, suggest that monolayer graphene grows continuously over defects. LÄS MER