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Visar resultat 11 - 15 av 36 avhandlingar som matchar ovanstående sökkriterier.
11. Design and Analysis of Highly Linear Integrated Wideband Amplifiers
Sammanfattning : This dissertation deals with techniques for designing integrated amplifiers with high linearity. Amplifiers with operating frequencies from Audio to RF have been built. An enhanced feedback configuration, capable of very low distortion, is presented. LÄS MER
12. The Decline of Class Voting in Sweden 1968–2014: Reconsiderations, Explanations and the Role of the New Middle Class
Sammanfattning : Class voting has been one of the most wide-spread and persistent patterns of voting behavior in Western democracies throughout the 20th century. Understanding its decline is an important part of understanding the current political situation. LÄS MER
13. Safe Distributed Control Allocation for Articulated Heavy Vehicles
Sammanfattning : The electrification of trucks is now followed by the electrification of trailers. Additionally, the maximum allowed length of vehicle combinations has been increased in many countries to enhance efficiency. LÄS MER
14. Vertical III-V Nanowire Transistors for Low-Power Logic and Reconfigurable Applications
Sammanfattning : With rapid increase in energy consumption of electronics used in our daily life, the building blocks — transistors — need to work in a way that has high energy efficiency and functional density to meet the demand of further scaling. III-V channel combined with vertical nanowire gate-all-around (GAA) device architecture is a promising alternative to conventional Si transistors due to its excellent electrical properties in the channel and electrostatic control across the gate oxide in addition to reduced footprint. LÄS MER
15. Vertical III-V Nanowire Tunnel Field-Effect Transistors : A Circuit Perspective
Sammanfattning : The energy scaling of integrated circuits has reached its limit because the operating voltage of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) based switches has reached its minimum value. MOSFETs are limited by thermionic emission and cannot achieve a subthreshold swing (SS) below 60 mV/decade at room temperature. LÄS MER