Sökning: "photoluminescence PL"

Visar resultat 1 - 5 av 66 avhandlingar innehållade orden photoluminescence PL.

  1. 1. Photoluminescence Studies of Polytype Heterostructured InP Nanostructures

    Författare :Asmita Jash; NanoLund: Centre for Nanoscience; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V semiconductor; Photoluminescence; time-resolved photoluminescence TRPL ; polytype; crystal phase heterostructure; InP; wurtzite WZ ; zincblende; Indirect Exciton;

    Sammanfattning : The interface between two semiconductors significantly influences their optical and electronic properties. In contrast to traditional material heterostructures, polytype heterostructures between wurtzite (wz) and zincblende (zb) segments in homomaterial InP nanostructures exhibit sharp interfaces with minimal strain. LÄS MER

  3. 2. Photoluminescence Studies of Single Quantum Dots

    Författare :Nikolay Panev; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Stranski-Krastanow; photoluminescence; laser spectroscopy; antibunching; random telegraph noise; blinking; Physics; Fysik; Fysicumarkivet A:2004:Panev; solid immersion lens; quantum dots; low-dimensional structures;

    Sammanfattning : This thesis presents photoluminescence (PL) spectroscopy studies of single III-V semiconductor quantum dots (QDs). The electronic properties of the QDs, as well as, the dynamics of the processes taking part inside and in the surroundings of the QDs have been studied by single quantum dot photoluminescence spectroscopy, time resolved spectroscopy, and correlation spectroscopy. LÄS MER

  4. 3. Optical studies of crystal phase heterostructures

    Författare :Irene Geijselaers; NanoLund: Centre for Nanoscience; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-V semiconductor nanowires; photoluminescence; photoluminescence excitation; polytype; crystal phase heterostructure; InP; GaAs; wurtzite; Fysicumarkivet A:2021:Geijselaers;

    Sammanfattning : III-V semiconductors are commonly used for a variety of optical applications, such as LED based lights and solar sells. Most III-V semiconductors, such as GaAs and InP, exhibit the zinc-blende (zb) crystal structure, but in the form of nanowires it is also possible to create them in the wurtzite (wz) crystal structure. LÄS MER

  5. 4. Optical Studies of Single Quantum Dots

    Författare :Jonas Persson; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; nano-optics; quantum optics; photoluminescence; micro-photoluminescence; single photon generation; Semiconductory physics; Halvledarfysik; low-dimensional structures; quantum dots; Stranski-Krastanow; Fysicumarkivet A:2004:Persson;

    Sammanfattning : This thesis presents spectroscopic studies of single self-assembled InP quantum dots (QDs). The electronic properties of these QDs have been studied by photoluminescence (PL) and scanning tunnelling luminescence (STL). The QDs were grown in the Stranski-Krastanow mode and were embedded in GaInP. LÄS MER

  7. 5. Optical Spectroscopy of Single Nanowires

    Författare :Johanna Trägårdh; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; core-shell nanowires; GaAs; InP; InAs; photocurrent; nanowire; time-resolved PL; photoluminescence; wurtzite;

    Sammanfattning : This thesis describes optical spectroscopy on III-V semiconductor nanowires. The nanowires were grown by metal-organic vapor phase epitaxy (MOVPE) and chemical beam epitaxy (CBE). LÄS MER