Sökning: "per erik östling"

Visar resultat 1 - 5 av 8 avhandlingar innehållade orden per erik östling.

  1. 1. High Performance Handoff Schemes for Modern Cellular Systems

    Författare :Per-Erik Östling; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; cellular systems; mobile radio systems; handoff; soft handoff; interference; channel allocation; macrocells; microcells; corner effect; Information technology; Informationsteknik; SRA - ICT; SRA - Informations- och kommunikationsteknik;

    Sammanfattning : .... LÄS MER

  3. 2. On Soft Handover in Cellular Systems : Downlink Considerations

    Författare :Per-Erik Östling; KTH; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Information technology; Informationsteknik;

    Sammanfattning : .... LÄS MER

  4. 3. Integration of thulium silicate for enhanced scalability of high-k/metal gate CMOS technology

    Författare :Eugenio Dentoni Litta; Per-Erik Hellström; Mikael Östling; Lars-Åke Ragnarsson; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; thulium; silicate; TmSiO; Tm2O3; interfacial layer; IL; CMOS; high-k; ALD; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance. Starting from the 45 nm technology node, the stringent requirements in terms of equivalent oxide thickness and gate current density have rendered the replacement of the conventional SiON/poly-Si stack unavoidable. LÄS MER

  5. 4. Applications of Si1-xGex alloys for Ge devices and monolithic 3D integration

    Författare :Konstantinos Garidis; Per-Erik Hellström; Mikael Östling; Sten Vollebregt; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon; germanium; epitaxy; selective; pn junction; germanium on insulator; GOI; Ge PFET; bonding; monolithic; sequential; three dimensional; 3D; low temperature; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : As the semiconductor industry moves beyond the 10 nm node, power consumption constraints and reduction of the negative impact of parasitic elements become important. Silicon germanium (Si1−xGex) alloys have been used to amplify the performance of Si based devices and integrated circuits (ICs) for decades. LÄS MER

  7. 5. Silicon Carbide High Temperature Photodetectors and Image Sensor

    Författare :Shuoben Hou; Mikael Östling; Carl-Mikael Zetterling; Per-Erik Hellström; Anthony O'Neill; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; high temperature; photodetector; photodiode; phototransistor; ultraviolet UV ; transistor-transistor logic TTL ; bipolar junction transistor BJT ; integrated circuit IC ; pixel sensor; image sensor; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : Silicon Carbide (SiC) has the advantages of ultraviolet (UV) sensing and high temperature characteristics because of its wide band gap. Both merits make SiC photodetectors very attractive in astronomy, oil drilling, combustion detection, biology and medical applications. LÄS MER