Sökning: "oxide traps"
Visar resultat 1 - 5 av 32 avhandlingar innehållade orden oxide traps.
1. Discovering Hidden Traps : in Nickel Oxide Nanoparticles for Dye-Sensitised Photocathodes
Sammanfattning : The finite nature of fossil fuels and their effect on the global climate, raised the need to find an alternative source of energy. This source should be environment compatible, cheap and abundant. The light coming from the Sun is a promising alternative. LÄS MER
2. Imaging and Spectroscopic Mapping of Blood Cell Activity : Nanoparticles and Neutrophil Extracellular Traps
Sammanfattning : Imaging and visualization of cell activity when exposed to nanomaterial are of main importance, when investigating biological response to a wide range of biomaterials from medical implants to smart nanoprobes. The ability to provide molecular and chemical information with spatial resolution in the region of sub-µm leads to increased insight and understanding of these biological challenges. LÄS MER
3. Electrical Characterization of III-V Nanostructure
Sammanfattning : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. LÄS MER
4. Transport in Oxides Studied by Gas Phase Analysis
Sammanfattning : The transport in oxides is studied by the use of gas phase analysis (GPA). An experimental method to identify transported species of gases and their contribution to the overall transport of gases in oxides and an experimental method to evaluate the parameters diffusivity, concentration, permeability of gases in oxides and effective pore size in oxides are developed, respectively. LÄS MER
5. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors
Sammanfattning : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. LÄS MER