Sökning: "out of band emission"
Visar resultat 11 - 15 av 29 avhandlingar innehållade orden out of band emission.
11. Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices
Sammanfattning : Wide band gap semiconductors, Zinc Oxide (ZnO), Gallium Nitride (GaN) and Silicon Carbide (SiC) have been emerged to be the most promising semiconductors for future applications in electronic, optoelectronic and power devices. They offer incredible advantages in terms of their optical properties, DC and microwave frequencies power handling capability, piezoelectric properties in building electromechanical coupled sensors and transducers, biosensors and bright light emission. LÄS MER
12. Characterization of oxy-fuel flames - their composition, temperature and radiation
Sammanfattning : Oxy-fuel combustion is receiving growing attention as one of the promising CO2 capture technologies in connection to power production. Yet, significant efforts are required in research and development of this combustion process in order to be able to design and optimize a full scale power plant. LÄS MER
13. Excitation and Ground-State Properties of Natural and Modified Nucleic Acid Bases
Sammanfattning : The nucleic acid bases are the carriers of genetic information in DNA and RNA. They are also the main chromophores of nucleic acids and determine their optical properties and sensitivity to UV radiation. LÄS MER
14. Spectroscopic studies of doped GaAs/ AlGaAs quantum wells in the high carrier density regime
Sammanfattning : This thesis is mainly based on experimental and theoretical investigations of the electronic structures and optical properties of p-type doped GaAs/AlGaAs quantum wells using a combination of photoluminescence and magneto-optical spectroscopy in the presence of high magnetic fields.The effects of high hole densities up to 3. LÄS MER
15. Studies of Light Emitting Devices Based on Er-doped Si and SiGe Layered Structures
Sammanfattning : Doping with rare earth element erbium (Er) in Si has recently attracted a lot of research interest due to potential applications in Si-based opto-electronics. By using molecular beam epitaxy (MBE), precipitate-free Er-doping in Si has been made together with other co-dopants, e.g., oxygen (0) and fluorine (F), up to a level ∼1020 cm-3. LÄS MER