Sökning: "out of band emission"

Visar resultat 1 - 5 av 27 avhandlingar innehållade orden out of band emission.

  1. 1. Revisiting the OFDM Guard Interval for Reduced Interference and Out-of-Band Emission

    Författare :Tayebeh Taheri; Luleå tekniska universitet; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : .... LÄS MER

  2. 2. Out of the Dark and into the Light - Microscopic Analysis of Bright, Dark and Trapped Excitons

    Författare :Maja Feierabend; Chalmers University of Technology; []
    Nyckelord :NATURVETENSKAP; TEKNIK OCH TEKNOLOGIER; NATURAL SCIENCES; ENGINEERING AND TECHNOLOGY; density matrix formalism; localized states; impurities; dark excitons; strain; transition metal dichalcogenides; Bloch equations;

    Sammanfattning : Atomically thin transition metal dichalcogenides (TMDs) have been in the focus of current research due to their efficient light-matter interaction, as well as the remarkably strong Coulomb interaction that leads to tightly bound excitons. Due to their unique band structure, TMDs show a variety of optically accessible bright and inaccessible dark excitons. LÄS MER

  3. 3. Spectrally Precoded OFDM-Design and Analysis

    Författare :Medhat Mohamad; Jaap van de Beek; Rickard Nilsson; Mérouane Debbah; Luleå tekniska universitet; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; OFDM; spectral precoding; out of band emission; 5G; Signalbehandling; Signal Processing;

    Sammanfattning : Despite shifting towards mm-wave bands, the sub-6 GHz band will continue to be a fundamental spectral band in 5G. However, the severe congestion in this band makes a well-constrained spectrum a critical requirementof 5G. LÄS MER

  4. 4. Electrical Characterisation of III-V Nanowire MOSFETs

    Författare :Markus Hellenbrand; Institutionen för elektro- och informationsteknik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ENGINEERING AND TECHNOLOGY; MOSFET; TFET; III-V; Nanowire; Hysteresis; Low-Frequency Noise; Random Telegraph Noise; cryogenic; Reliability; Radio Frequency; Small-Signal Model;

    Sammanfattning : The ever increasing demand for faster and more energy-efficient electricalcomputation and communication presents severe challenges for the semiconductor industry and particularly for the metal-oxidesemiconductorfield-effect transistor (MOSFET), which is the workhorse of modern electronics. III-V materials exhibit higher carrier mobilities than the most commonly used MOSFET material Si so that the realisation of III-V MOSFETs can enable higher operation speeds and lower drive voltages than that which is possible in Si electronics. LÄS MER

  5. 5. Design, Analysis and Prototyping of Spectrally Precoded OFDM

    Författare :Medhat Mohamad; Jaap van de Beek; Rickard Nilsson; Majid Nasiri Khormuji; Luleå tekniska universitet; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Signalbehandling; Signal Processing;

    Sammanfattning : Despite shifting towards mm-wave bands, the sub 6-GHz band will continue tobe a fundamental spectral band in 5G. Yet, the severe crowdedness of this bandmakes a well constrained spectrum one of the critical 5G requirements. LÄS MER