Sökning: "ohmic contacts"

Visar resultat 21 - 25 av 32 avhandlingar innehållade orden ohmic contacts.

1. 21. Silicon Carbide High Temperature Photodetectors and Image Sensor

   Författare :Shuoben Hou; Mikael Östling; Carl-Mikael Zetterling; Per-Erik Hellström; Anthony O'Neill; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; high temperature; photodetector; photodiode; phototransistor; ultraviolet UV ; transistor-transistor logic TTL ; bipolar junction transistor BJT ; integrated circuit IC ; pixel sensor; image sensor; Informations- och kommunikationsteknik; Information and Communication Technology;

   Sammanfattning : Silicon Carbide (SiC) has the advantages of ultraviolet (UV) sensing and high temperature characteristics because of its wide band gap. Both merits make SiC photodetectors very attractive in astronomy, oil drilling, combustion detection, biology and medical applications. LÄS MER

3. 22. Quantum Devices from the Assembly of Zero- and One-Dimensional Building Blocks

   Författare :Claes Thelander; Fasta tillståndets fysik; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; quantum devices; classical mechanics; quantum mechanics; relativity; statistical physics; thermodynamics; Matematisk och allmän teoretisk fysik; klassisk mekanik; kvantmekanik; relativitet; gravitation; termodynamik; statistisk fysik; Mathematical and general theoretical physics; single-electron transistor; nanowires; AFM; carbon nanotubes; Fysicumarkivet A:2003:Thelander;

   Sammanfattning : This thesis describes novel methods for the fabrication of nanometer-scale electronic devices, such as single-electron transistors and resonant tunneling diodes, from wire- and dot-shaped building blocks. The first part of the thesis describes the manipulation of metal nanoparticles and carbon nanotubes using an atomic force microscope. LÄS MER

4. 23. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

   Författare :Vincent Desmaris; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

   Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER

5. 24. Design, Fabrication and Characterization of GaN HEMTs for Power Switching Applications

   Författare :Björn Hult; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; DCIT; SCE; high voltage; isolation; ‘buffer-free’; gate dielectric; GaN HEMT; passivation; DIBL;

   Sammanfattning : The unique properties of the III-nitride heterostructure, consisting of gallium nitride (GaN), aluminium nitride (AlN) and their ternary compounds (e.g. AlGaN, InAlN), allow for the fabrication of high electron mobility transistors (HEMTs). LÄS MER

7. 25. Excitonic and charge carrier transport in organic materials and device applications

   Författare :Qingzhen Bian; Olle Inganäs; Feng Gao; Ergang Wang; Guglielmo Lanzani; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES;

   Sammanfattning : With the potential for future commercial use, organic electronics have been intensively studied for the last few decades. To exploit the next generation of high-performance devices, detailed study of the underlying physics is essential. LÄS MER