Sökning: "ohmic contacts"

Visar resultat 1 - 5 av 28 avhandlingar innehållade orden ohmic contacts.

  1. 1. Electrical contacts, Ohmic and Schottky, to 4H-Silicon Carbide for device applications

    Författare :Sang-Kwon Lee; KTH; []
    Nyckelord :silicon carbice; Ohmic; Schottky contacts; co-evaporation; current-voltage; capacitance-voltage measurement; power device; 4H-SiC; TLM;

    Sammanfattning : .... LÄS MER

  2. 2. Ohmic Contacts and Thin Film Resistors for GaN MMIC Technologies

    Författare :Anna Malmros; Chalmers University of Technology; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ohmic contact; TFR; TiN; HEMT; GaN; TaN;

    Sammanfattning : Gallium nitride (GaN) based high electron mobility transistor (HEMT) technology has attracted much attention during the last decade which has resulted in a rapid development in material quality and device performance. GaN HEMT microwave electronics are currently finding its applications in wireless communication infrastructure and radar systems. LÄS MER

  3. 3. Optimization of Ohmic Contacts and Surface Passivation for ‘Buffer-Free’ GaN HEMT Technologies

    Författare :Chen Ding Yuan; Chalmers University of Technology; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ENGINEERING AND TECHNOLOGY; QuanFINE; passivation; GaN HEMT; pretreatment; ohmic contact;

    Sammanfattning : Gallium nitride high electron mobility transistors (GaN HEMTs) draw attention from high frequency and high power industries due to unique properties including high electron mobility and saturation velocity combined with high breakdown voltage. This makes GaN HEMTs suitable for power devices with high switching speed and high frequency applications with high power density requirements. LÄS MER

  4. 4. Tailoring of Contacts on Silicon Carbide - Procedures and Mechanisms

    Författare :S. A. Perez-Garcia; Chalmers University of Technology; []
    Nyckelord :interfacial reaction; metallic contacts; Silicon carbide; silicides; XPS.;

    Sammanfattning : Silicon carbide (SiC) exhibits very good electrical, thermal, chemical and mechanical properties which make it suitable for the next generation of wide band gap electronic devices, where silicon (Si) cannot be used due to its limitations with respect to the mentioned properties. Nickel (Ni) and Tantalum (Ta) are among the metals used for the contact formation. LÄS MER

  5. 5. Ohmic Contacts for High Temperature Integrated Circuits in Silicon Carbide

    Författare :Katarina Smedfors; Carl-Mikael Zetterling; Niklas Rorsman; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : In electrical devices and integrated circuits, ohmic contacts are necessary and a prerequisite for the current transport over the metal-semiconductor junctions. At the same time, a desired property of the ohmic contacts is to not add resistance or in other way disturb the performance. LÄS MER