Sökning: "ohmic contacts"

Visar resultat 1 - 5 av 32 avhandlingar innehållade orden ohmic contacts.

1. 1. Electrical contacts, Ohmic and Schottky, to 4H-Silicon Carbide for device applications

   Författare :Sang-Kwon Lee; KTH; []
   Nyckelord :silicon carbice; Ohmic; Schottky contacts; co-evaporation; current-voltage; capacitance-voltage measurement; power device; 4H-SiC; TLM;

   Sammanfattning : .... LÄS MER

3. 2. Thermally stable electrical contacts to 6H silicon carbide

   Författare :Nils Lundberg; Mikael Östling; Claude Jaussaud; KTH; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; I-V current -voltage ; C-V capacitance-voltage ; rectifying; ohmic; interface; silicide; carbide; epilayer; Schottky barrier height; current rectification ratio CRR ; specific contact resistivity; transmission line model TLM ; contact resistance; transfer length; Electrical Engineering; Elektro- och systemteknik;

   Sammanfattning : Silicon Carbide (SiC) are at present being developed for use in high temperature (≥ 500◦C) and high-power environments under which conventional semiconductors can hardly perform.  Thermally stable electrical contacts are essential to the ability of SiC to function under such extreme conditions. LÄS MER

4. 3. Ohmic Contacts and Thin Film Resistors for GaN MMIC Technologies

   Författare :Anna Malmros; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ohmic contact; TFR; TiN; HEMT; GaN; TaN;

   Sammanfattning : Gallium nitride (GaN) based high electron mobility transistor (HEMT) technology has attracted much attention during the last decade which has resulted in a rapid development in material quality and device performance. GaN HEMT microwave electronics are currently finding its applications in wireless communication infrastructure and radar systems. LÄS MER

5. 4. Optimization of Ohmic Contacts and Surface Passivation for ‘Buffer-Free’ GaN HEMT Technologies

   Författare :Chen Ding Yuan; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; QuanFINE; passivation; GaN HEMT; pretreatment; ohmic contact;

   Sammanfattning : Gallium nitride high electron mobility transistors (GaN HEMTs) draw attention from high frequency and high power industries due to unique properties including high electron mobility and saturation velocity combined with high breakdown voltage. This makes GaN HEMTs suitable for power devices with high switching speed and high frequency applications with high power density requirements. LÄS MER

7. 5. Tailoring of Contacts on Silicon Carbide - Procedures and Mechanisms

   Författare :S. A. Perez-Garcia; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interfacial reaction; metallic contacts; Silicon carbide; silicides; XPS.;

   Sammanfattning : Silicon carbide (SiC) exhibits very good electrical, thermal, chemical and mechanical properties which make it suitable for the next generation of wide band gap electronic devices, where silicon (Si) cannot be used due to its limitations with respect to the mentioned properties. Nickel (Ni) and Tantalum (Ta) are among the metals used for the contact formation. LÄS MER