Sökning: "ohmic contact"

Visar resultat 11 - 15 av 35 avhandlingar innehållade orden ohmic contact.

  1. 11. Contacts on Silicon Carbide by Use of Nickel and Tantalum ---Preparation and Characterisation

    Författare :Yu Cao; Chalmers tekniska högskola; []
    Nyckelord :Keywords: Silicon Carbide; Metal Contact; Thin Films; Preferential Etching; Interfacial Reaction; effect; Nickel; Tantalum; #955; Depth Profile; I-V Characteristics.;

    Sammanfattning : Silicon carbide (SiC) is one of the attractive semiconductors due to its good electrical, thermal and mechanical properties. It is a promising material for high temperature, high power and high frequency application. Reliable electrodes are always necessary to utilise SiC for electronic devices. LÄS MER

  3. 12. Field Emission from Multi-walled Carbon Nanotubes and its Application in Nanoelectromechanical Systems

    Författare :Martin Sveningsson; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; nanoelectromechanical systems; electron field emission; Fowler-Nordheim theory; Carbon nanotubes; Ohmic heating;

    Sammanfattning : Films of aligned multi-walled carbon nanotubes (MWCNTs) areinteresting for applications such as cold emission cathodes in flat-panel display technology and in lighting elements. MWCNTs are, besides this, good candidates to be used innanoelectromechanical systems (NEMS). LÄS MER

  4. 13. Advanced Heterostructure Designs and Recessed Ohmic Contacts for III-Nitride-Based HEMTs

    Författare :Johan Bergsten; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Sammanfattning : Modern III-Nitride (III-N) heterostructures offer high mobility, high electron density, large breakdown voltages and good thermal capabilities. High electron mobility transistors (HEMT) based on III-Ns are therefore ideal for high frequency, high power amplification. The intended applications are within radar and mobile communication. LÄS MER

  5. 14. Buffer Related Dispersive Effects in Microwave GaN HEMTs

    Författare :Johan Bergsten; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; trapping effects; C-doping; AlGaN GaN interface quality; recessed ohmic contacts; GaN HEMT; buffer design;

    Sammanfattning : In applications such as mobile communication and radar, microwave power generation at high frequency is of utmost importance. The GaN HEMT offers a unique set of properties that makes it suitable for high power amplification at high frequencies. LÄS MER

  7. 15. Development of new characterization techniques for III-V nanowire devices

    Författare :Olof Persson; Synkrotronljusfysik; []
    Nyckelord :STM; XPS; Semiconductor nanowires; nanowire devices; top contact mode; HAXPES; Fysicumarkivet A:2017:Persson;

    Sammanfattning : This dissertation presents the new methods and techniques developed to investigate the properties of nanowires (NWs) and NW devices and the results obtained using these methods. The growth and characterization of NWs have become a large research field because NWs have been shown to improve the properties of many semiconductor applications such as transistors, solar cells, and light emitting diodes. LÄS MER