Sökning: "noise parameter"

Visar resultat 1 - 5 av 207 avhandlingar innehållade orden noise parameter.

  1. 1. Gearbox noise : Correlation with transmission error and influence of bearing preload

    Författare :Mats Åkerblom; Sören Andersson; D. Houser; KTH; []
    Nyckelord :gear; gearbox; noise; vibration; transmission error; bearing preload; Mechanical engineering; Maskinteknik;

    Sammanfattning : The five appended papers all deal with gearbox noise and vibration. The first paper presents a review of previously published literature on gearbox noise and vibration. The second paper describes a test rig that was specially designed and built for noise testing of gears. LÄS MER

  3. 2. Microwave Transistor Noise Model Extraction Methods and a Non-Contacting Scattering Parameter Measurement Method

    Författare :Jörgen Stenarson; Chalmers University of Technology; []
    Nyckelord :extraction; S-parameter; noise parameter; vector network analyzer; electro-magnetic probe; microwave; non-contacting testing; transistor noise model; VNA; EM-probe; non-invasive testing;

    Sammanfattning : This thesis has two parts. The first part discuss noise model extraction methods for FETs. The second part describe theory and implementation of a non-contacting S-parameter measurement method. Noise is an important aspect for a circuit designer, because noise generated in the circuit is a sensitivity limiting factor. LÄS MER

  4. 3. Experimentally Based HFET Modeling for Microwave and Millimeter Wave Applications

    Författare :Mikael Garcia; Chalmers University of Technology; []
    Nyckelord :MODFET; soft-breakdown; cold FET; large-signal; source balance; SDHT; dispersion; noise figure; temperature noise model; small-signal; TEGFET; direct extraction; Chalmers model; noise parameters; modeling; HEMT; HFET; noise;

    Sammanfattning : Transistor models are very important in the design of Monolithic Microwave Integrated Circuits (MMICs). Circuit simulations based on accurate transistor models are one of the keys to high circuit yield. Transistor models can also be used to trace problems in the device fabrication processes. LÄS MER

  5. 4. GaN HEMT Low Frequency Noise Characterization for Low Phase Noise Oscillator Design

    Författare :Thi Ngoc Do Thanh; Chalmers University of Technology; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low frequency noise; flicker noise; phase noise; deposition method.; oscillator; VCO; GaAs pHEMT; MMIC; GaN HEMT; passivation; InGaP HBT;

    Sammanfattning : The thesis presents low frequency noise (LFN) characterization of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) for low phase noise oscillator design. First, GaN HEMT technology is benchmarked versus other transistor technologies, e.g. LÄS MER

  7. 5. On Parameter Estimation Employing Sinewave Fit andPhase Noise Compensation in OFDM Systems

    Författare :Senay Negusse; Peter Händel Professor; Per PhD Zetterberg Docent; Mikko Valkama; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Parameter Estimation; Maximum-likelihood; OFDM; Phase-Noise; Wireless Channel; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : In today’s modern society, we are surrounded by a multitude of digital devices.The number of available digital devices is set to grow even more. As the trendcontinues, product life-cycle is a major issue in mass production of these devices. LÄS MER