Sökning: "nitride semiconductor devices"

Visar resultat 1 - 5 av 44 avhandlingar innehållade orden nitride semiconductor devices.

  1. 1. Optical Characterization of III-Nitride and II-V Semiconductor Nanowires

    Författare :David Lindgren; Fasta tillståndets fysik; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; III-Nitride; III-V; Fysicumarkivet A:2014:Lindgren; Semiconductor; Nanowire; Photoluminescence; Cathodoluminescence;

    Sammanfattning : The optical properties of III-V semiconductor nanowires for optical devices have been investigated by photoluminescence spectroscopy, cathodoluminescence spectroscopy and cathodoluminescence imaging. The material systems that have been studied include the nitrides (InN, GaN and AlN) and ternaries, and a few common phosphides and arsenides. LÄS MER

  3. 2. Study of GaN Based Nanostructures and Hybrids

    Författare :Mathias Forsberg; Galia Pozina; Ching-Lien Hsiao; Kevin P. O'Donnell; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Sputtering; Forster; Semiconductor; Nitride; GaN; Hybrid; Nanorods; Nanostructure; Thin film; Förstoffning; Sputtring; Förster; Halvledare; Nitrid; GaN; Hybrider; Nanostavar; Nanostrukturer; tunnfilmer;

    Sammanfattning : GaN and its alloys with Al and In belong to the group III nitride semiconductors and are today the materials of choice for efficient white light emitting diodes (LEDs) enabling energy saving solid state lighting. Currently, there is a great interest in the development of novel inexpensive techniques to fabricate hybrid LEDs combining high quality III-N quantum well (QW) structures with inexpensive colloidal nanoparticles or conjugated polymers. LÄS MER

  4. 3. Metal Gate Technology for Advanced CMOS Devices

    Författare :Gustaf Sjöblom; Jörgen Olsson; Stefan de Gendt; Uppsala universitet; []
    Nyckelord :Electronics; metal gate; high-k dielectrics; titanium nitride; zirconium nitride; MOSFET; thin film; work function; XPS; Elektronik;

    Sammanfattning : The development and implementation of a metal gate technology (alloy, compound, or silicide) into metal-oxide-semiconductor field effect transistors (MOSFETs) is necessary to extend the life of planar CMOS devices and enable further downscaling. This thesis examines possible metal gate materials for improving the performance of the gate stack and discusses process integration as well as improved electrical and physical measurement methodologies, tested on capacitor structures and transistors. LÄS MER

  5. 4. Physics of palladium metal-oxide-semiconductor devices

    Författare :Mårten Armgarth; Linköpings universitet; []
    Nyckelord :;

    Sammanfattning : This thesis Palladium gate metal-oxide-semiconductor (PdMOS) devices are used as hydrogen sensors. It is shown that the sensitivity is only partly due to the change of the effective work function of the Pd gate on hydrogen adsorption. Sodium ion drift experiments have shown that hydrogen-sodium interactions occur in PdMOS devices. LÄS MER

  7. 5. Integrated Nonlinear Optics in Silicon Nitride Waveguides

    Författare :Clemens Krückel; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; integrated optics devices; nonlinear optics materials; four-wave mixing; nonlinear optical signal processing; wavelength conversion devices; nanostructure fabrication;

    Sammanfattning : Current nanofabrication techniques allow patterning of optical waveguides with submicron cores. This results in strong confinement of light, which leads to high optical intensities. LÄS MER