Sökning: "nickel silicides"
Visar resultat 1 - 5 av 6 avhandlingar innehållade orden nickel silicides.
1. Fabrication and Corrosion Properties of Nickel Silicides Thin Films
Sammanfattning : Surface engineering is a vital issue in engineering materials design. The enhancement of surface properties extends the materials lifetime and improves the materials performance without changing the bulk properties. Thin film deposition is one of the most commonly applied techniques in this field. LÄS MER
2. Contacts on Silicon Carbide by Use of Nickel and Tantalum ---Preparation and Characterisation
Sammanfattning : Silicon carbide (SiC) is one of the attractive semiconductors due to its good electrical, thermal and mechanical properties. It is a promising material for high temperature, high power and high frequency application. Reliable electrodes are always necessary to utilise SiC for electronic devices. LÄS MER
3. Tailoring of Contacts on Silicon Carbide - Procedures and Mechanisms
Sammanfattning : Silicon carbide (SiC) exhibits very good electrical, thermal, chemical and mechanical properties which make it suitable for the next generation of wide band gap electronic devices, where silicon (Si) cannot be used due to its limitations with respect to the mentioned properties. Nickel (Ni) and Tantalum (Ta) are among the metals used for the contact formation. LÄS MER
4. Synthesis and In Situ ToF-LEIS Analysis of Ultrathin Silicides and Ti-based Films
Sammanfattning : Thin films and coatings play a significant role in today’s society, with applications in electronics, optics, mechanics, and biomedicine. Further advancement in the field of surface coatings requires a good understanding of the unique features of ultrathin films and surfaces, which can only be reached with analysis techniques capable of resolving composition and morphology on a sub-nm scale. LÄS MER
5. High-Resolution Studies of Silicide-films for Nano IC-Components
Sammanfattning : The function of titanium- and nickel-silicides is to lower the series resistance and contact resistivity in gate, source and drain contacts of an integrated circuit transistor. With decreasing dimensions, the low resistivity C54 TiSi2 is not formed and stays in its high resistivity phase C49. LÄS MER