Sökning: "nanowire"
Visar resultat 6 - 10 av 204 avhandlingar innehållade ordet nanowire.
6. Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications
Sammanfattning : This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. LÄS MER
7. InGaAs Nanowire and Quantum Well Devices
Sammanfattning : To fulfill the increasing demand for high-speed electronics used for computation or communication is one everlasting challenge for the semiconductor industry. Emerging fields such as quantum computation also has a need for circuits operating at cryogenic temperatures. LÄS MER
8. Vertical InAs Nanowire Devices and RF Circuits
Sammanfattning : Recent decades have seen an exponential increase in the functionality of electronic circuits, allowing for continuous innovation, which benefits society. This increase in functionality has been facilitated by scaling down the dimensions of the most important electronic component in modern electronics: the Si-based MOSFET. LÄS MER
9. Kinetic and Thermodynamic Modeling of Nanowire Growth
Sammanfattning : This thesis aims to expand on the fundamental knowledge of crystal growth, selectively focusing on the area of particle-seeded nanowire growth in the III-V materials system. The growth process is complex. LÄS MER
10. Electrical Characterisation of III-V Nanowire MOSFETs
Sammanfattning : The ever increasing demand for faster and more energy-efficient electricalcomputation and communication presents severe challenges for the semiconductor industry and particularly for the metal-oxidesemiconductorfield-effect transistor (MOSFET), which is the workhorse of modern electronics. III-V materials exhibit higher carrier mobilities than the most commonly used MOSFET material Si so that the realisation of III-V MOSFETs can enable higher operation speeds and lower drive voltages than that which is possible in Si electronics. LÄS MER