Sökning: "nanowire NW"

Visar resultat 1 - 5 av 12 avhandlingar innehållade orden nanowire NW.

  1. 1. III–V Nanowire Surfaces

    Författare :Martin Hjort; NanoLund; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; low energy electron microscopy; scanning tunneling spectroscopy; scanning tunneling microscopy; surface; III–V semiconductor materials; nanowire; photoemission electron microscopy; photoelectron spectroscopy; Fysicumarkivet A:2014:Hjort;

    Sammanfattning : This dissertation deals with the geometric and electronic structure of surfaces on III–V semiconductor nanowires (NWs). NWs made of InAs, GaAs, and InP have been studied using scanning tunneling microscopy/spectroscopy (STM/S), low energy electron microscopy (LEEM), photoemission electron microscopy (PEEM), and x-ray photoelectron spectroscopy (XPS). LÄS MER

  2. 2. Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications

    Författare :Adam Jönsson; Nanoelektronik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; CMOS; RRAM; III-V; InAs; GaSb; InGaAs; Heterostructure; vertical; nanowire NW ; MOSFET; III-V materials; RRAM; RF; CMOS; InAs; GaSb; InGaAs; heterostructure; Vertical nanowire;

    Sammanfattning : This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. LÄS MER

  3. 3. Atomic Scale Characterization of III-V Nanowire Surfaces

    Författare :Johan Knutsson; NanoLund; []
    Nyckelord :III–V semiconductor materials; nanowire; surface; scanning tunneling microscopy; wurtzite; zinc blende; scanning tunneling spectroscopy; Fysicumarkivet A:2017:Knutsson;

    Sammanfattning : This dissertation focus on the atomic-scale characterization of the surface properties and electronic structure of III–V semiconductor nanowires (NWs). Since the early 2000s, the fabrication and characterization of III–V NWs has been a very significant topic within material science due to their potential for applications in lighting, energy harvesting, and electronics. LÄS MER

  4. 4. III-V Nanowire MOSFET High-Frequency Technology Platform

    Författare :Stefan Andric; Nanoelektronik; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; III-V; nanowire NW ; Technology library; Process Monitor Structures; Radio Frequency; millimeter wave mmWave ; Compact Modelling; Circuit Design; Matching Networks; Low Noise Amplifier;

    Sammanfattning : This thesis addresses the main challenges in using III-V nanowireMOSFETs for high-frequency applications by building a III-Vvertical nanowire MOSFET technology library. The initial devicelayout is designed, based on the assessment of the current III-V verticalnanowire MOSFET with state-of-the-art performance. LÄS MER

  5. 5. Nanowire Transistors and RF Circuits for Low-Power Applications

    Författare :Karl-Magnus Persson; Institutionen för elektro- och informationsteknik; []
    Nyckelord :InAs; Nanowire; Metal-oxide-semiconductor field-effect transistor; MOSFET; RF; Mixer; Circuit; 1 f-noise; Simulation; Modelling;

    Sammanfattning : The background of this thesis is related to the steadily increasing demand of higher bandwidth and lower power consumption for transmitting data. The work aims at demonstrating how new types of structures, at the nanoscale, combined with what is referred to as exotic materials, can help benefit in electronics by lowering the consumed power, possibly by an order of magnitude, compared to the industry standard, silicon (Si), used today. LÄS MER