Sökning: "microwave power saturation"

Visar resultat 1 - 5 av 11 avhandlingar innehållade orden microwave power saturation.

1. 1. Graphene FETs in Microwave Applications

   Författare :Omid Habibpour; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; microwave amplifiers; S-parameters characterisation; device modelling; MMIC; device fabrication; Graphene; subharmonic resistive mixers; integrated circuits; harmonic balance analysis; microwave FETs;

   Sammanfattning : Graphene is a one-atom-thick sheet of carbon with numerous impressive properties. It is a promising material for future high-speed nanoelectronics due to its intrinsic superior carrier mobility and very high saturation velocity. LÄS MER

3. 2. Microwave Power Devices and Amplifiers for Radars and Communication Systems

   Författare :Sher Azam; Qamar ul Wahab; Erik Janzén; Georg Boeck; Linköpings universitet; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductor physics; Halvledarfysik;

   Sammanfattning : SiC MESFETs and GaN HEMTs posses an enormous potential in power amplifiers at microwave frequencies due to their wide bandgap features of high electric field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. LÄS MER

4. 3. Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes

   Författare :Sher Azam; Qamar Wahab; Jörgen Olsson; Linköpings universitet; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; SiC; MESFET; GaN; HEMT; Power Amplifiers; Materials science; Teknisk materialvetenskap;

   Sammanfattning : SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. LÄS MER

5. 4. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

   Författare :Vincent Desmaris; Chalmers tekniska högskola; []
   Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

   Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER

7. 5. Photosynthetic Oxygen Evolution - EPR studies of the manganese cluster of photosystem II

   Författare :Sindra Peterson Årsköld; Biokemi och Strukturbiologi; []
   Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; S2 state; second cycle; Biochemistry; Metabolism; Biokemi; metabolism; S0 state; light-adaptation; pulsed EPR; methanol; relaxation; microwave power saturation; S-cycle; Oxygen-evolving complex; Water-oxidizing complex;

   Sammanfattning : In this thesis, a new electron paramagnetic resonance (EPR) signal from photosystem II is presented. The signal is shown to originate from the S0 oxidation state of the oxygen-evolving complex (OEC). LÄS MER