Sökning: "microwave electronics"

Visar resultat 16 - 20 av 54 avhandlingar innehållade orden microwave electronics.

  1. 16. Novel tantalate-niobate films for microwaves

    Författare :Jang-Yong Kim; Alex Grishin; Andrey B. Kozyrev; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ferroelectrics; sodium potassium niobates; silver tantalate niobate; barium stronitium titanate; Electronics; Elektronik;

    Sammanfattning : Microwave materials have been widely used in a variety of applications ranging from communication devices to military satellite services, and the study of materials properties at microwave frequencies and the development of functional microwave materials have always been among the most active areas in solid-state physics, materials science, and electrical and electronic engineering. In recent years, the increasing requirements for the development of high speed, high frequency circuits and systems require complete understanding of the properties of materials function at microwave frequencies. LÄS MER

  3. 17. Wide Bandgap MMIC Technology

    Författare :Mattias Sudow; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; AlGaN GaN; SiC MMIC; SiC MESFET; SiC Schottky; Microwave;

    Sammanfattning : Wide bandgap technology for microwave electronics has been an intense area of research during the last decade. With reas of application ranging from base station amplifiers to radar transceivers, this technology has the resources to be the basis for the next generation of high power microwave electronics. LÄS MER

  4. 18. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

    Författare :Vincent Desmaris; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

    Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER

  5. 19. Generation, Modulation, and Detection of Signals in Microwave Photonic Systems

    Författare :Andreas Wiberg; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Microwave photonics; radio over fiber; mm-wave generation; PSK; QAM; subcarrier modulation; photonic frequency multiplication; spurious free dynamic range third-order intercept point; millimeter-wave photonics; uni-travelling-carrier photodiode; millimeter-wave communication system;

    Sammanfattning : This thesis deals with the use of photonic technology in microwave and millimeter-wave applications. The two major parts of this work have been techniques for transmission and signal generation. LÄS MER

  7. 20. Graphene field-effect transistors for high frequency applications

    Författare :Muhammad Asad; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; high frequency; Graphene; transit frequency; transconductance; maximum frequency of oscillation; contact resistance; microwave electronics; field-effect transistors;

    Sammanfattning : Rapid development of wireless and internet communications requires development of new generation high frequency electronics based on new device concepts and new materials. The very high intrinsic velocity of charge carriers in graphene makes it promising new channel material for high frequency electronics. LÄS MER