Sökning: "microwave characterization"

Visar resultat 6 - 10 av 101 avhandlingar innehållade orden microwave characterization.

  1. 6. Determining and Optimizing the Current and Magnetic Field Dependence of Spin-Torque and Spin Hall Nano-Oscillators : Toward Next-Generation Nanoelectronic Devices and Systems

    Författare :Seyed Amir Hossein Banuazizi; Johan Åkerman; Erik Wahlström; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; nanoelectronics; spintronics; nanomagnetism; ferromagnetic materials; microwave oscillators; magnetization dynamics; spin waves; giant magneto-resistance; spin Hall effect; spin-torque nano-oscillators; spin Hall nano-oscillators; numerical modeling; electrical characterization; microwave characterization; magnetic force microscopy.; Fysik; Physics; Teknisk materialvetenskap; Materials Science and Engineering; Informations- och kommunikationsteknik; Information and Communication Technology; Electrical Engineering; Elektro- och systemteknik;

    Sammanfattning : Spin-torque and spin Hall nano-oscillators are nanoscale devices (about 100 nm) capable of producing tunable broadband high-frequency microwave signals ranging from 0.1 GHz to over 65 GHz that several research groups trying to reach up to 200 - 300 GHz. LÄS MER

  3. 7. Nonlinear Characterization of Wideband Microwave Devices and Dispersive Effects in GaN HEMTs

    Författare :Sebastian Gustafsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; large-signal; dispersive effects; electron trapping; thermal coupling; HEMT; GaN; microwave; wideband;

    Sammanfattning : Measurements play a key role in the development of microwave hardware as they allow engineers to test and verify the RF performance on a system, circuit, and component level. Since modern cellular standards employ complex modulation formats with wider signal bandwidths to cope with the growing demand of higher datarates, nonlinear characterization using wideband stimuli is becoming increasingly important. LÄS MER

  4. 8. High frequency electronic packaging and components : characterization, simulation, materials and processing

    Författare :Christian Johansson; Mats Robertsson; Li-Rong Zheng; Linköpings universitet; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Dielectric loss; high frequency electrical characterization; microwave circuits; multilayer thin film technology; ORMOCER®; permittivity; printed diode; sequential build-up; silicone elastomer; Signal processing; Signalbehandling;

    Sammanfattning : Electronic packaging continues to move towards improved performance and lower cost. Requirements of higher performance, reduced size, weight and cost of both high density interconnects and high frequency devices have led to the search for new materials, material combinations, methods, processes and production equipment. LÄS MER

  5. 9. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

    Författare :Vincent Desmaris; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

    Sammanfattning : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). LÄS MER

  7. 10. On the characterization and design of active microwave components

    Författare :Martin Schöön; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; microwave devices; radar systems; GaAs; design; MESFETs; HEMTs;

    Sammanfattning : .... LÄS MER