Sökning: "metamorphic heterostructures"

Hittade 4 avhandlingar innehållade orden metamorphic heterostructures.

  1. 1. Metamorphic Heterostructures and Lasers on GaAs

    Författare :Ivar Tångring; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; metamorphic heterostructures; InGaAs quantum well; graded buffer layer; Semiconductor laser; GaAs; molecular beam epitaxy; telecom laser;

    Sammanfattning : The objective of this thesis is to demonstrate the metamorphic growth of heterostructure lasers on GaAs substrates. Many heterostructure devices have their performance limited by the need to grow on lattice-matched substrates. LÄS MER

  3. 2. Optimization of Metamorphic Materials on GaAs Grown by MBE

    Författare :Yuxin Song; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; heterostructures; alloy graded buffer; GaAs; molecular beam epitaxy; metamorphic; threading dislocation; InGaAs;

    Sammanfattning : Advanced epitaxial technologies such as molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) have enabled the idea of semiconductor heterostructures, which built up the foundation of the fast developing information and communication technology nowadays. Lattice mismatch has been a problem limiting designs of semiconductor heterostructures. LÄS MER

  4. 3. Design and Characterization of 1.3-1.6 µm Metamorphic Materials and Lasers on GaAs

    Författare :Ivar Tångring; Chalmers tekniska högskola; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; Semiconductor laser; molecular beam epitaxy; InGaAs quantum well; graded buffer layer; metamorphic heterostructures;

    Sammanfattning : The development of fiber-optical networks for broad-band access is expected to create a huge market for laser transmitters in the 1.3-1.55 µm wavelength range. The existing InP-based lasers have poor temperature stability. LÄS MER

  5. 4. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Författare :Giuseppe Moschetti; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; metamorphic; high frequency; high electron mobility transistor HEMT ; low power; low noise.; InAs AlSb;

    Sammanfattning : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. LÄS MER