Sökning: "metalorganic vapor phase epitaxy"
Visar resultat 6 - 6 av 6 avhandlingar innehållade orden metalorganic vapor phase epitaxy.
6. Electronic properties of intrinsic defects and impurities in GaN
Sammanfattning : With its outstanding properties such as a wide direct bandgap (3.4 eV), high electron mobility and high breakdown voltage, GaN and its alloys with In and Al are considered as one of the most important semiconductors for optoelectronic devices and high-power and high-frequency transistors. LÄS MER