Sökning: "metallization"

Visar resultat 21 - 25 av 38 avhandlingar innehållade ordet metallization.

  1. 21. Vacuum insulation in buildings : Means to prolong service life

    Författare :Thomas I. Thorsell; Gudni Jóhannesson; Christer Sjöström; KTH; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; vacuum insulation; thermal bridge; serpentine edge; coated film; Building engineering; Byggnadsteknik;

    Sammanfattning : Vacuum insulation panels, VIPs, constitute a new insulation material, 6 to 8 times better than traditional insulation materials, which utilizes the positive influence vacuum has on the thermal properties of certain materials. A VIP is a composite with a flat core enclosed by an envelope preventing the core to fill with gas. LÄS MER

  2. 22. Copper germanide schottky contacts to silicon and electrically active defects in n-type 6H-SiC and 4H-SiC epitaxial layers

    Författare :James P. Doyle; KTH; []
    Nyckelord :;

    Sammanfattning : Metallization for contacts to silicon devices presents amajor challenge as the linewidths are further reduced into thesub-micron regime. Copper germanide due to its relatively lowroom temperature resistivity ( ~ 10 µΩ - cm) has beenexamined as a potential contact metallixation. LÄS MER

  3. 23. Mixers and Multifunctional MMICs for Millimeter-Wave Applications

    Författare :Sten Gunnarsson; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; G-band; double-balanced Gilbert mixer; sub-harmonically pumped resistive mixer; pHEMT; receiver; image reject mixer; dual-quadrature mixer; balanced resistive mixer; resistive mixer; 220 GHz; high data rate; drain mixer; 53 GHz; single-chip; V-band.; radiometer; mixer; broadband wireless communication; multifunctional; MMIC; GaAs; mHEMT; transmitter; 60 GHz;

    Sammanfattning : This thesis treats the design and characterization of different mixer and multifunctional monolithic microwave integrated circuits (MMICs) in GaAs pHEMT and mHEMT technologies. The MMICs operate at the V (50 – 75 GHz) and G (140 – 220 GHz) bands and several of them demonstrate state-of-the-art performance, level of integration, novel topologies, and/or novel functionality. LÄS MER

  4. 24. Structural, Electronic and Mechanical Properties of Advanced Functional Materials

    Författare :Muhammad Ramzan; Rajeev Ahuja; S. K. Saxena; Uppsala universitet; []
    Nyckelord :NATURVETENSKAP; NATURAL SCIENCES; DFT; Hydrogen storage; Rechargeable batteries; Amorphization; Electronic structure; Crystal strcuture; Molecular dynamics; Diffusion; Intercalation voltage; High pressure; MAX phases; Mechanical properties; Optical properties; Phase change memory; Spintronics; Magnetism; Correlation effects; Band structure; Physics with spec. in Atomic; Molecular and Condensed Matter Physics; Fysik med inriktning mot atom- molekyl- och kondenserande materiens fysik;

    Sammanfattning : The search for alternate and renewable energy resources as well as the efficient use of energy and development of such systems that can help to save the energy consumption is needed because of exponential growth in world population, limited conventional fossil fuel resources, and to meet the increasing demand of clean and environment friendly substitutes. Hydrogen being the simplest, most abundant and clean energy carrier has the potential to fulfill some of these requirements provided the development of efficient, safe and durable systems for its production, storage and usage. LÄS MER

  5. 25. Cryogenic Ultra-Low Noise InP High Electron Mobility Transistors

    Författare :Joel Schleeh; Chalmers tekniska högskola; []
    Nyckelord :TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; LNA; cryogenic; low noise; DC power dissipation; ALD; GaAs MHEMT; gain fluctuations; InP HEMT;

    Sammanfattning : Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for cryogenic low noise amplifiers at microwave frequencies. Record noise temperatures below 2 K using InP HEMT equipped cryogenic low noise amplifiers (LNAs) were demonstrated already a decade ago. LÄS MER