Sökning: "metallisation"

Hittade 4 avhandlingar innehållade ordet metallisation.

  1. 1. SiC CMOS and memory devices for high-temperature integrated circuits

    Författare :Mattias Ekström; Carl-Mikael Zetterling; B. Gunnar Malm; Tobias Erlbacher; KTH; []
    Nyckelord :ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; bismuth titanate Bi4Ti3O12 ; CMOS; ferroelectric capacitor; field oxide; inverter; metallisation; metal oxide semiconductor field effect transistor MOSFET ; ohmic contacts; ring oscillator; semiconductor processing; silicon carbide 4H-SiC ; CMOS; ferroelektrisk kondensator; fältoxid; halvledartillverkning; inverterare; kiselkarbid 4H-SiC ; metallisering; MOSFET; ohmska kontakter; ringoscillator; vismuttitanat Bi4Ti3O12 ; Informations- och kommunikationsteknik; Information and Communication Technology;

    Sammanfattning : High-temperature electronics find use in extreme environments, like data logging in downhole drilling for geothermal energy production, inside of high-temperature turbines, industrial gas sensors and space electronics. The simplest systems use a sensor and a transmitter, but more advance electronic systems would additionally require a microcontroller with memory. LÄS MER

  2. 2. Physical and chemical surface modifications of a polyimide to enhance its adhesion to silver

    Författare :Åsa Sandgren; KTH; []
    Nyckelord :Polyimide; Polymer surface modification; Polymer metallisation; Plasma treatment; Animation rwaction; Nitration reaction; Silver sputtering; Polymer-metal adhesion; Wet-procedure; Sulfonation reaction; Chemical etching;

    Sammanfattning : .... LÄS MER

  3. 3. The reactive formation of TiSi2in the presence of refractory metals

    Författare :Aliette Mouroux; KTH; []
    Nyckelord :;

    Sammanfattning : Titanium disilicide (TiSi2) has been the favoured material for contactmetallisation in recent Si devices. The formation of TiSi2usually begins with the high resistivity C49 phaseas a result of the Ti-Si interaction at about 300-550 °Cand finishes with the low resistivity C54 phase through theC49-C54 phase transformation at about 700 °C. LÄS MER

  4. 4. Contacts on Silicon Carbide by Use of Nickel and Tantalum ---Preparation and Characterisation

    Författare :Yu Cao; Chalmers University of Technology; []
    Nyckelord :Keywords: Silicon Carbide; Metal Contact; Thin Films; Preferential Etching; Interfacial Reaction; effect; Nickel; Tantalum; λ; Depth Profile; I-V Characteristics.;

    Sammanfattning : Silicon carbide (SiC) is one of the attractive semiconductors due to its good electrical, thermal and mechanical properties. It is a promising material for high temperature, high power and high frequency application. Reliable electrodes are always necessary to utilise SiC for electronic devices. LÄS MER